Millisecond, nanosecond, and picosecond laser pulse induced damage thresholds on single-crystal are investigated in this study. The thresholds of laser-induced damage on silicon are calculated theoretically for three pulse widths based on the thermal damage model. An axisymmetric mathematical model is established for the transient temperature field of the silicon. Experiments are performed to test the damage thresholds of silicon at various pulse widths. The results indicate that the damage thresholds obviously increase with the increasing of laser pulse width. Additionally, the experimental results agree well with theoretical calculations and numerical simulation results.

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Laser scribing of functional thin-film stacks attracts increasing attention especially for applications of flexible electronics or photovoltaics. Laser can perform selective removal of the thin-film stacks that is essential for the isolation and interconnection of the solar cells. The optimization of the laser scribing process concerning the functional properties of the device requires customized characterization techniques minimizing side effects. The proposed and demonstrated nested circular laser scribing technique allows the in-process measurement of the electrical characteristics, e.g., the shunt formation due to laser scribing of the thin-film stack, minimizing secondary effects originating from aging, contacting, changing of sample characteristics, or alterations of the measurement conditions. This technique enables the identification of reliable and quick information on the changes of the solar cell characteristics by laser scribing as this is demonstrated in this work.