Copper(II) were immobilised onto medical titanium surface by polydopamine (PDA) chelating, to build intrinsic antibacterial implant materials for inhibition of implant infection. A scanning electrical microscope showed that the modified titanium surface morphology was a porous nanostructure. An energy dispersive spectrometer showed the existence of Cu, and X-ray photoelectron spectroscopy results further confirmed that the immobilised copper element was in the form of Cu(II). Bacteria plate colony counting results showed that modified titanium surface had decent antibacterial property, matching the ion release outcomes. It could be conclude that the PDA assisted Cu(II) immobilisation was an efficient and effective method for antibacterial modification of titanium.

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Ferroelectric field effect transistors (FeFETs) using individual GaN nanowire as the conducting channel and Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin film as the gate dielectric were fabricated, and their electrical properties were investigated. The curves of the transfer characteristics for the individual GaN nanowire-based FeFET are of counterclockwise hysteresis loops, as the gate voltage was swept from negative to positive and then back. The memory window is about 5 V, and an on/off current ratio is up to 10 3 at zero gate voltage, indicating the feasibility of one-bit ferroelectric memory. The physical mechanism for the memory effect could be attributed to the reversible carrier concentration in individual GaN nanowire, which is modulated by the switchable remnant polarization of PZT thin film. The results may be helpful for the potential application of GaN nanowire in nonvolatile memory. 1 Introduction Semiconductor nanowires are promising candidates for applications throughout the fields ranging from electronics and optoelectronics to energy conversion and spintronics, for instance as field effect transistor (FET), laser, sensor, photovoltaic device, and bioscience device [1][2][3]. Nanowires are particularly attractive due to their unique electrical and optical properties such as their good transportation of charge carriers, large surfaceto-volume ratio, and high crystalline quality [4]. Moreover, they are suitable for increasing the area density of device cells and reducing the operating voltage effectively due to its unique properties that is the small dimension. As a result, the power consumption can be lowered to about several nJ [5]. In particular, GaN nanowire is one of the most important III-V semiconductor nanowire for electronic and optoelectronic applications, owing to its superior properties such as high crystalline quality, large energy bandgap (E g % 3.5 eV), high saturation velocity, and quantum confinement effect [1,6,7]. Thus, it has great potential for realizing next generation nanodevices.The ferroelectric field effect transistor (FeFET) using ferroelectric material as a dielectric layer in a metal-oxidesemiconductor (MOS) FET structure has attracted a great