InSbN alloys are fabricated by two-step nitrogen ion implantation into InSb (111) wafers. X-ray photoelectron spectroscopy indicates that most of the implanted nitrogen ions substitute Sb to form In–N bonds. The percentage of the In–N bonds is found to decrease with the increase in the implanted nitrogen. Such alloys can effectively detect long wavelength infrared radiation and the absorption peak energies can be controlled by monitoring the implanted nitrogen dose. The measured peak wavelengths are consistent with the band gaps of the alloys calculated using a ten-band k⋅p model.

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We report the electrical properties of the InSbN alloys fabricated by two-step implantation of nitrogen ions into InSb wafers, characterized by Hall measurements. The alloy with higher implanted dose shows lower electron concentration due to the acceptor nature of nitrogen. At temperatures below 150 K, the electron concentration does not change and follows an exponential relation at above 200 K. The Hall mobility in all samples monotonically decreases with the increase of temperature, indicating the phonon dominating scattering mechanism. The annealing results reveal that annealing temperatures up to 598 K make the carrier concentration lower due to the reduction of donor-type defects caused by ion implantation and the acceptor nature of nitrogen.

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High quality InSb and InSbN alloys were grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. Low temperature photoluminescence spectra of InSb epilayers revealed that in addition to the main band-toband emission around 5.4 ȝm, an emission peak around 5.87 ȝm was also be observed. Our results indicate that the low energy emission peak was originated from the antisite SbIn defects. Discrepancy of diffraction peak position between InSbN alloy and InSb epilayers was detected from the XRD measurement, indicating that the nitrogen has been incorporated into InSb. Photoluminescence measurement showed that the band gap of the InSbN alloy has been extended to longer wavelength by the N incorporation. Band-gap narrowing effect from the high carrier concentration has been taken into consideration to explain the difference between the band gap values from photoluminescence and photo current measurement.