The Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg0.77Cd0.23Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extracted by analysis of the weak anti-localization effect using the Golub model. It is found that both the splitting and coefficient increase with increasing electron density (∼3.0–6.0 × 1015 m−2), i.e., with the gate voltage. A self-consistent Schrodinger-Poisson calculation is performed and suggests that the nonlinear Rashba effect caused by the weakening of interband coupling, especially at high electron density, dominates this system.
Articles you may be interested inExperimental approaches to zero-field spin splitting in a gated high-mobility In 0.53 Ga 0.47 As / InP quantum well structure: Weak antilocalization and beating pattern J. Appl. Phys. 107, 053708 (2010); 10.1063/1.3309786Power loss measurements in quasi-1D and quasi-2D systems in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure Electron heating measurements in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure system J.Green's function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure J.The magneotransport properties of a high carrier concentration and high mobility 20-nm thick In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well (QW) are investigated by tilt angle dependent Shubnikov-de Haas oscillations and by weak antilocalization (WAL) in an in-plane magnetic field. The effective g-factor g à and zero field spin splitting D 0 are extracted from tilt angle dependent beating pattern. We found that g à shows a dramatic reduction with increasing carrier density due to the increased effective band gap. Furthermore, an anomalously rapid suppression of the WAL effect with increasing in-plane magnetic field B jj is observed. This reveals that the total dephasing rate is not solely contributed by Zeeman splitting. The microroughness scattering in the QW is proposed to be another factor to cause the dephasing and thus responsible for this effect. V C 2013 American Institute of Physics. [http://dx.
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