We study the problem of learning high dimensional regression models regularized by a structured-sparsity-inducing penalty that encodes prior structural information on either input or output sides. We consider two widely adopted types of such penalties as our motivating examples: 1) overlapping group lasso penalty, based on the 1 / 2 mixed-norm penalty, and 2) graph-guided fusion penalty. For both types of penalties, due to their non-separability, developing an efficient optimization method has remained a challenging problem. In this paper, we propose a general optimization approach, called smoothing proximal gradient method, which can solve the structured sparse regression problems with a smooth convex loss and a wide spectrum of structured-sparsityinducing penalties. Our approach is based on a general smoothing technique of Nesterov. It achieves a convergence rate faster than the standard first-order method, subgradient method, and is much more scalable than the most widely used interior-point method. Numerical results are reported to demonstrate the efficiency and scalability of the proposed method.
The charge states of single molecular magnetic chains were manipulated with a scanning tunneling microscope and identified by spin-flip inelastic tunneling spectroscopy. We show that the charged and neutral states have different spin structures and therefore exhibit different features associated with the spin-flip processes in tunneling spectra. The experiment demonstrates a general approach for detecting the charge states at the nanometer scale in a more straightforward manner than using indirect information.
We report a transport study of ultrathin Bi 2 Se 3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.
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