Directional growth of ultralong nanowires (NWs) is significant for practical application of large-scale optoelectronic integration. Here, we demonstrate the controlled growth of in-plane directional perovskite CsPbBr NWs, induced by graphoepitaxial effect on annealed M-plane sapphire substrates. The wires have a diameter of several hundred nanometers, with lengths up to several millimeters. Microstructure characterization shows that CsPbBr NWs are high-quality single crystals, with smooth surfaces and well-defined cross section. The NWs have very strong band-edge photoluminescence (PL) with a long PL lifetime of ∼25 ns and can realize high-quality optical waveguides. Photodetectors constructed on these individual NWs exhibit excellent photoresponse with an ultrahigh responsivity of 4400 A/W and a very fast response speed of 252 μs. This work presents an important step toward scalable growth of high-quality perovskite NWs, which will provide promising opportunities in constructing integrated nanophotonic and optoelectronic systems.

Transition metal dichalcogenides (TMDs) have provided a fundamental stage to study light-matter interactions and optical applications at the atomic scale due to their ultrathin thickness and their appropriate band gap in the visible region. Here, we report the strong nonlinear optical effects, including second-harmonic generation (SHG) and third-harmonic generation (THG) in spiral WS structures. SHG intensity quadratically increases with layer numbers, other than diminishing the oscillation of 2H stacking TMDs. The contrary SHG behavior is attributed to the broken symmetry from twisted screw structures, revealed by aberration-corrected transmission electronic microscope observation. Furthermore, the twist angle of the screw structure (5 degrees) was obtained by high-resolution transmission microscope measurements and confirmed by polarization tests of SHG output. Moreover, we roughly estimate the effective second-order nonlinear susceptibility. The discovery and understanding of the accumulation of nonlinear susceptibility of spiral structures with increasing thickness will extend the nonlinear applications of TMDs.

their great success in photovoltaics (PVs), with a phenomenally rapid rise of the power conversion efficiency (PCE) from 3.8% [1] to over 23% [2,3] in the past few years. Such high PCE of perovskite solar cells has been ascribed to the ultralong carrier lifetimes, [4][5][6][7][8] long carrier diffusion lengths, [9][10][11][12][13][14] and the extraordinarily defect tolerance. [15][16][17] Following the success of perovskites in photovoltaics, research on light-emitting diodes (LEDs), [18,19] amplified spontaneous emission (ASE) or lasers, [20][21][22][23][24] and photodetectors [25][26][27][28][29] have also gained substantial interests. Meanwhile, the rapid progress of MHPs on various applications spurred a flurry of photophysical studies in order to understand the origin of the high performance of these devices, of which the nature of the photoexcitation species has been mostly debated. [5,22,30,31] Since the photoexcitation states near the bandgap affect the key processes such as charge transport and light emission of optoelectronic devices, there is no doubt that the investigation of electronic excitations near the optical band edge is crucial for MHPs. Such knowledge is essential not only for understanding the correlation between the fundamental photophysics and device performances, but also offering a guideline for their further applications with improved performances. Generally, there are two kinds of photoexcitations near the band edge for direct bandgap semiconductors: free carriers and excitons. Exciton binding energy that reflects the Coulomb interaction strength between photoexcited electrons and holes determines the balance of the populations between the two species. Typically, inorganic semiconductors are free-carrier materials with the exciton binding energies only in few meV at room temperature and their excited states being populated principally by free carriers. While organic semiconductors are excitonic materials with the exciton binding energies in hundreds of meV and thus excitons prevailing in the excited states. Whereas, MHPs that combine some merits of organic and inorganic semiconductors seem to stand for an exotic class of semiconductors between these two limiting cases, with the experimentally determined exciton binding energy varying in a wide range of 2 to more than 50 meV for the prototype perovskite MAPbI 3 . [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48] Such large variations of the exciton binding energies reported for MHPs give rise to a strongly debated question, that is, whether free carriers or excitons are generated upon photoexcitation? In other words, what is the nature of the photoexcitation species Metal halide perovskites (MHPs) have recently attracted great attention from the scientific community due to their excellent photovoltaic performance as well as their tremendous potential for other optoelectronic applications such as light-emitting diodes, lasers, and photodetectors. Despite the rapid progress in device applications, a solid unders...

Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.

We report on a multi-petawatt 3-cascaded all-optical parametric chirped-pulse amplification laser facility. The experimental results demonstrate that the maximum energy after the final amplifier and after the compressor is 168.7 J and 91.1 J, respectively. The pulse width (FWHM) is 18.6 fs in full width at half maximum after optimization of pulse compression. Therefore, 4.9 PW peak power has been achieved for the laser facility. To the best of our knowledge, this is the highest peak power reported so far for an all-optical parametric chirped-pulse amplification facility, and a compressed pulse shorter than 20 fs is achieved in a PW-class laser facility for the first time.