Two-inch-sized perovskite crystals, CH3 NH3 PbX3 (X=I, Br, Cl), with high crystalline quality are prepared by a solution-grown strategy. The availability of large perovskite crystals is expected to transform its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, LEDs, etc., just as crystalline silicon has done in revolutionizing the modern electronics and photovoltaic industries.

Even though the mesoporous-type perovskite solar cell (PSC) is known for high efficiency, its planar-type counterpart exhibits lower efficiency and hysteretic response. Herein, we report success in suppressing hysteresis and record efficiency for planar-type devices using EDTA-complexed tin oxide (SnO2) electron-transport layer. The Fermi level of EDTA-complexed SnO2 is better matched with the conduction band of perovskite, leading to high open-circuit voltage. Its electron mobility is about three times larger than that of the SnO2. The record power conversion efficiency of planar-type PSCs with EDTA-complexed SnO2 increases to 21.60% (certified at 21.52% by Newport) with negligible hysteresis. Meanwhile, the low-temperature processed EDTA-complexed SnO2 enables 18.28% efficiency for a flexible device. Moreover, the unsealed PSCs with EDTA-complexed SnO2 degrade only by 8% exposed in an ambient atmosphere after 2880 h, and only by 14% after 120 h under irradiation at 100 mW cm−2.

Cs+ doping into 2D (BA)2(MA)3Pb4I13 perovskites boosts power conversion efficiency (PCE) to 13.7% and yields superior humidity and thermal stability.

Thinness-controlled perovskite wafers are directly prepared using a geometry-regulated dynamic-flow reaction system. It is found that the wafers are a superior material for photodetectors with a photocurrent response ≈350 times higher than that made of microcrystalline thin films. Moreover, the wafers are compatible with mass production of integrated circuits.