In this paper we present a precise analytical model for high performance capacitive RF MEMS switch design. Based on this model, the parameters that can influence the switch performance are discussed. The most important geometric parameters are membrane length and thickness, the distance between membrane and lower electrode, the lower electrode length, and the membrane material stress. A capacitive RF switch with optimized structure and expected to actuated with low operation voltage was proposed. The membrane and the lower electrode length are 400μτη and 180μτη respectively. Aluminum is used as metallic structure materials.Measurement result shows the switch can be actuated with a voltage of 12.3 V.

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