Diluted magnetic semiconductor Zn1−xMnxO nanowires were synthesized via an in situ doping of manganese in ZnO nanowires using vapor phase growth at 500 °C. The maximum content of the manganese in the ZnO is around 13 at. %, approaching the maximum thermal equilibrium limit of Mn solubility in ZnO at the growth temperature. Structure and composition analysis revealed that the manganese was doped into the lattice structure, forming solid solution instead of precipitation. Magnetic property measurements revealed that the as-doped Zn1−xMnxO nanowires exhibit ferromagnetic behavior with Curie temperature around 37 K.

Polycrystalline Cr-doped TiO2 films were fabricated by co-sputtering Cr and TiO2 targets in a pure Ar and O2 mixture with various oxygen partial pressures. Ferromagnetism is observed in all samples and the Curie temperatures are well above 390 K. The saturation magnetization of films shows strong dependence on the oxygen growth pressure while keeping a constant Cr concentration. The ferromagnetism is enhanced in the films deposited at lower oxygen pressures which are thus oxygen deficient, indicating an important role of oxygen vacancies in the ferromagnetic origin of Cr-doped TiO2.