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Mixed-species flocks of birds are distributed world-wide and can be especially dominant in temperate forests during the non-breeding season and in tropical rainforests year-round. We review from a community ecology perspective what is known about the structure and organization of flocks, emphasizing that flocking species tend to be those particularly vulnerable to predation, and flocks tend to be led by species that are able to act as sources of information about predators for other species. Studies on how flocks respond to fragmentation and land-use intensification continue to accumulate, but the question of whether the flock phenomenon makes species more vulnerable to anthropogenic change remains unclear. We review the literature on flocks in East Asia and demonstrate there is a good foundation of knowledge on which to build. We then outline potentially fruitful future directions, focusing on studies that can investigate how dependent species are on each other in flocks, and how such interdependencies might affect avian habitat selection in the different types of human-modified environments of this region.

Sophisticated microelectromechanical systems for device and sensor applications have flourished in the past decade. These devices exploit piezoelectric, capacitive, and piezoresistive effects, and coupling between them. However, high-performance piezoresistivity (as defined by on/off ratio) has primarily been observed in macroscopic single crystals. In this Letter, we show for the first time that rare-earth monochalcogenides in thin film form can modulate a current by more than 1000 times due to a pressure-induced insulator to metal transition. Furthermore, films as thin as 8 nm show a piezoresistive response. The combination of high performance and scalability make these promising candidates for nanoscale applications, such as the recently proposed piezoelectronic transistor (PET). The PET would mechanically couple a piezoelectric thin film with a piezoresistive switching layer, potentially scaling to higher speeds and lower powers than today's complementary metal-oxide-semiconductor technology.

Field effect transistors are reaching the limits imposed by the scaling of materials and the electrostatic gating physics underlying the device. In this Communication, a new type of switch based on different physics, which combines known piezoelectric and piezoresistive materials, is described and is shown by theory and simulation to achieve gigahertz digital switching at low voltage (0.1 V).