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We have investigated memory characteristics of InGaZnO (IGZO)-channel ferroelectric-FETs (FeFETs) with 2D planar and 3D structure by TCAD simulation to improve the memory window (MW) with a floating-body channel for high-density memory applications. From the study on 2D-planar FeFETs with single-gate (SG) and double-gate (DG), the MW depends on channel length (L) and enhanced with shorter L due to the stronger electrostatic coupling from the source and drain to the center region of the IGZO layer. From the study on 3D-structure FeFETs with macaroni (MAC) and nanowire (NW) structure, the large MW can be obtained especially in NW FeFETs due to the electric-field concentration by Gauss’s law in the 3D electrostatics. Furthermore, we have systematically studied and discussed the device design of MAC and NW structure FeFETs in terms of the diameter and thickness for high-density memory applications. As IGZO thickness decreases and outer diameter of the IGZO layer decreases, the MW increases due to the voltage divider and the electric-field concentration. The device parameters that can maximize the MW can be determined under the constraints of the layout and material based on this study.

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