Coronary artery disease and acute myocardial infarction (AMI) are the leading causes of death for both men and women. Serum cardiac-specific troponin level is now used for the “early” diagnosis of AMI. However, due to the “delayed” release of troponin, an earlier, more sensitive and specific biomarker is urgently demanded to further reduce AMI mortality. Recent studies have found that circulating microRNAs (miRNAs) are closely linked to myocardial injury. Due to the cell-specific physiological functions and the stability of miRNAs in plasma, serum, and urine, they are emerging as sensitive biomarkers of AMI. This review summarizes the latest insights into the identification and potential application of plasma and serum miRNAs as novel biomarkers for diagnosis and prognosis of AMI.

Whereas miR-101 is involved in the development and progression of breast cancer, the underlying molecular mechanisms remain to be elucidated. Here, we report that miR-101 expression is inversely correlated with the clinical stage, lymph node metastasis and prognosis in breast cancers. Introduction of miR-101 inhibited breast cancer cell proliferation and invasion in vitro and suppressed tumor growth and lung metastasis of in vivo. CX chemokine receptor 7 (CXCR7) is a direct target of miR-101, positively correlating with the histological grade and the incidence of lymph node metastasis in breast cancer patients. The effects of miR-101 were mimicked and counteracted by CXCR7 depletion and overexpression, respectively. STAT3 signaling downstream of CXCR7 is involved in miR-101 regulation of breast cancer cell behaviors. These findings have implications for the potential application of miR-101 in breast cancer treatment.

the further promotion of devices' performance. [7] As is well known to all, PPC phenomenon occurs in most oxide semiconductor materials owing to the large quantity of oxygen vacancy (V o ) defects and high density of trap states. [8,9] Phototransistors, one kind of three-terminal PD with one more terminal-gate to flexibly control the channel carriers' transportation behavior, have been regarded as an alternative solution to improve the PD performance. [10,11] Phototransistor possesses the intrinsic gain of transistors and regular photoconductors, which makes it possible to achieve both high light-todark current ratio and responsivity. [11,12] Last but not the least, the PPC phenomenon is possibly eliminated by exerting a gate pulse, as Jeon et al. demonstrated in the three-terminal photosensor array with GIZO/IZO/GIZO channel. [5] For a-Ga 2 O 3 UV PD or imaging applications, a research on fabrication and utilization of phototransistor architecture is urgently needed to well suppress PPC and raise the response speed while retaining a high photoresponsivity as well. Meanwhile, the controllable and selective etching of a-Ga 2 O 3 channel to metals and other oxides is critical to the achievement of a low gate leakage current and good transfer characteristics. [13,14] Wet chemical etching of β-Ga 2 O 3 has been demonstrated by using H 3 PO 4 and H 2 SO 4 , respectively. [15,16] However, these strong acids will corrode metals and oxides readily, which bring a big trouble to device fabrication.In this paper, we present bottom-gate a-Ga 2 O 3 thin film transistors (TFTs) and phototransistors where the a-Ga 2 O 3 channels are selectively etched using tetramethyl ammonium hydroxide (TMAH) aqueous solution. Note that this new etching method owns the advantages of low cost, simple operation, good safety, and desirable compatibility with lithography. For the common bottom-gate Ga 2 O 3 TFT on Si, the device with patterned channel exhibits superior transistor characteristics to the unpatterned one. A bottom-gate a-Ga 2 O 3 phototransistor with interdigital finger-shaped source/drain (S/D) electrodes is prepared on quartz and applied to detect deep UV rays. It demonstrates typical transistor output and transfer characteristics with a high on/off ratio of ≈10 7 . Meanwhile, an excellent photodetector performance appears under a 254 nm UV illumination, including a high lightto-dark ratio of 5 × 10 7 and responsivity of 5.67 × 10 3 A W −1 . By applying a positive gate pulse, PPC in the a-Ga 2 O 3 phototransistors is effectively eliminated with a fast decay in 5 ms. A three-terminal thin-film transistor (TFT) architecture is essential for photodetectors to reach a good balance between high responsivity and fast response speed. Bottom-gate amorphous Ga 2 O 3 (a-Ga 2 O 3 ) TFTs are fabricated to boost their UV photodetection properties. During the device fabrication process, a simple chemical-etching solution with the advantages of easy operation, low cost, and compatibility with traditional lithography process, is developed to sele...