The development of intrinsic ferromagnetism in two-dimensional (2D) limit is at the core of ultra-compact spintronic applications. However, direct synthesis of non-layered 2D magnets with strong ferromagnetic order is still in infancy. Here we report the phasecontrollable synthesis of trigonal and monoclinic Cr5Te8 flakes via a facile chemical vapor deposition route. Both phases exhibit robust ferromagnetism with strong perpendicular anisotropy down to a few nanometers, as confirmed by both magneto-optical and 2 magnetotransport measurements. High Curie temperature up to 200 K is obtained by manipulating the phase structure and thickness. Remarkably, a colossal anomalous Hall effect is observed in the more distorted monoclinic Cr5Te8 with an enhanced anomalous Hall conductivity of 650 Ω -1 cm -1 and anomalous Hall angle of 5% achieved simultaneously. Our work paves the way for the scalable synthesis of 2D magnetic materials and highlights the great potential of Cr5Te8 for engineering future spintronic devices.

Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of ~ MHz. Altogether with the fact that SiC is a growth and fabrication-friendly material, our result may be relevant for future applications in quantum communication technology.

Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.

No abstract

No abstract