features for developing high-performance X-ray imagers and ultraviolet sensors. [3] For imaging application, IGZO TFTs were mainly integrated with amorphous silicon and organic photodiodes, [3c,e,4] the spectral of which were usually limited to visible light detection. Large-area, active-matrix infrared sensing, therefore, remains a challenge.Organic-inorganic hybrid perovskites possess excellent optoelectronic properties with high absorption coefficient, high charge carrier mobility, long carrier diffusion lengths, and tunable bandgaps, [5] rendering it a promising material for across-the-board optoelectronic devices, [6] including photovoltaic cells, [7] light-emitting, lasing devices, [8] and high-performance photodetectors. [9] In particular, compared with predominant photodetectors made of inorganic semiconductors, solution-processable perovskite is more promising for lowcost, flexible, and large-area scenarios. [6d] Conventional lead-based perovskite photodiodes (PDs) provide a detection spectral range from 300 to 800 nm. [10] To further extend the spectral response to the near-infrared (NIR) range, there are normally two approaches. One is to combine perovskite with narrow bandgap polymers or quantum dots such as PDPP3T [11] and PbS quantum dots. [12] Another approach is to introduce an Sn-Pb binary perovskite PDs. [13] The smaller ionic radii of Sn 2+ than Pb 2+ (Sn 2+ :1.35 Å and Pb 2+ : 1.49 Å) [14] reduces the bandgap of perovskites due to the bowing effect, [15] so that Sn-Pb hybrid perovskite has lower bandgap to extend the light absorption to ≈1000 nm. Recently Xiaobao et al. reported MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 perovskite photodetector, exhibiting a detectivity of over 10 12 Jones ranging from 800 to 970 nm. [13c] Wang et al. fabricated mixed Sn-Pb perovskite photodetectors with a broadband response from 300 to 1000 nm, responsivity (R) of over 0.4 A W −1 , and detectivity (D*) of over 10 12 Jones in the near-infrared region. [13b] Encouraging improvements in the Sn-Pb based perovskite stability have also been reported very recently, such as using GuaSCN passivation to achieve 1 µs carrier lifetime with long-term stability. [16] The above development of low bandgap organic-inorganic perovskite materials has brought new opportunity for developing advanced flat-panel Flat-panel imagers have wide applications in industrial and medical inspections. Nonetheless, large area infrared imaging remains a challenge due to the fact that the state-of-the-art infrared sensors are usually based on silicon or germanium technologies, which are limited by the wafer size. Recent advances in low bandgap Sn-Pb perovskite photodiodes (PDs) and indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) matrix backplane bring new opportunity for developing the large area near-infrared image sensor. As a proof of concept, a 12 × 12 pixels array with each pixel independently controlled by the gate voltage of a TFT are constructed. Arrays of Sn-Pb based perovskite PDs are spin deposited onto the IGZO TF...

Tin–lead (Sn–Pb) based hybrid perovskite solar cell is investigated as a potential solution to extend the light absorption spectrum range, and to reduce environmental hazard caused by lead in the perovskite materials. Nonetheless, due to the instability of tin, the Sn–Pb based perovskite solar cells suffer from more severe efficiency degradation when compared to the lead‐based perovskite solar cells, which restricts its further development. Here, a quaternary ammonium halide compound, Me4NBr, is introduced to passivate the Sn–Pb based perovskite surface. The Me4NBr effectively reduces the surface defects and enhances the open circuit voltage and fill factor of the Sn–Pb based perovskite solar cell. Moreover, the Me4NBr treated Sn–Pb perovskite cells also demonstrate a significant stability enhancement when compared with the untreated Sn–Pb perovskite cells.

Inorganic–organic hybrid perovskite thin films have attracted significant attention for developing new types of optoelectronic devices due to their superb optoelectronic properties. Herein, a hybrid phototransistor for near‐infrared (NIR) detection is constructed by capping a narrow bandgap Pb–Sn perovskite layer on top of an indium gallium zinc oxide (IGZO) thin‐film transistor (TFT), with a C60 interlayer acting as the electron transporting layer. The Pb–Sn perovskite layer is precisely spin patterned onto the IGZO TFTs' channel region via a hydrophobic perfluoro(1‐butenyl vinyl ether) (CYTOP) photolithography process. In this configuration, a high‐detectivity (2.24 × 1010 Jones at 900 nm) perovskite–C60–IGZO hybrid infrared phototransistor is achieved, and the narrow bandgap perovskite–IGZO hybrid phototransistor has a sensitive photoresponse down to 1100 nm.

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