Narrow Bandgap Pb–Sn Perovskites/InGaZnO Hybrid Phototransistors for Near‐Infrared Detection

Yan, Lizhi; Du, Xingzhi; Liu, Chuan; Zhang, Shengdong; Zhou, Hang

doi:10.1002/pssa.201900417

Cited by 16 publications

(17 citation statements)

References 33 publications

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“…Recently, phototransistors with a hybrid structure in which such perovskite is stacked together with an oxide semiconductor have been reported. [ 114–119 ]…”

Section: Classification Of Metal Oxide Phototransistors By Absorption Layermentioning

confidence: 99%

A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

et al. 2021

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Metal oxide thin‐film transistors have been continuously researched and mass‐produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non‐oxide hybrid structure. The materials of the absorption layer applied to absorb long‐wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next‐generation convergence studies combined with other research fields are introduced and future research directions are detailed.

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“…Recently, phototransistors with a hybrid structure in which such perovskite is stacked together with an oxide semiconductor have been reported. [ 114–119 ]…”

Section: Classification Of Metal Oxide Phototransistors By Absorption Layermentioning

confidence: 99%

A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

et al. 2021

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“…SnPb mixed perovskites have been integrated with amorphous indium gallium zinc oxide thin-film transistors (IGZO TFTs) to achieve broadband phototransistors/imaging sensors, which benefit from merits of IGZO TFTs, including the large-area production, low-temperature solution-processability and high field-effect carrier mobility. [219,222,223] Hang Zhou, Chuan Liu, and co-workers combined (FASnI 3 ) 0.6 (MAPbI 3 ) 0.4 photodiodes with IGZO TFTs to fabricate a 12 × 12 pixels imaging array through spin-on-patterning method, in which each pixel could be independently controlled by the gate voltage of a TFT (Figure 20a). [219] Due to its natural hydrophobic characteristic, the perfluoro (1-butenyl vinyl ether) polymer layer (CYTOP) was employed as the encapsulated layer of bottom IGZO TFTs, meanwhile it was etched to pattern top self-assembled SnPb mixed perovskite photodiode arrays (Figure 20b).…”

Section: Wwwadvopticalmatdementioning

confidence: 99%

Hybrid Halide Perovskite‐Based Near‐Infrared Photodetectors and Imaging Arrays

Mei

Huang

Shen

et al. 2022

Advanced Optical Materials

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Hybrid halide perovskites have been demonstrated to be prospective materials in optoelectronic devices due to their outstanding photoelectric properties and facile manufacturability by low‐cost and fast solution‐processed methods. Particularly, to meet increasingly potential applications in near‐infrared (NIR) detection and imaging, perovskites have been introduced and explored their roles, some of which achieve the comparable performance with traditional silicon counterparts. Here, the recent advancements of hybrid halide perovskite‐based NIR photodetectors and imaging arrays in terms of perovskite formation, device structures, working mechanisms, and device performances are reviewed. Pb perovskite‐based devices either employ sub‐bandgap absorption and intraband transition, or incorporate with narrow‐bandgap semiconductors to achieve NIR detection, which could reach the spectral response onset at 2.6 µm wavelength. Sn perovskite‐based devices employ the strategies of template‐assisted engineering and reducing additives to inhibit the oxidation of Sn2+ states for efficient detection. SnPb mixed perovskite devices employ compositional engineering, passivation strategies, crystallization tuning, and encapsulation to achieve efficient and long shelf‐life photodetectors with an external quantum efficiency of 70% at 940 nm wavelength. Finally, potential prospects are proposed, including spectral response extension, pixel integration, flexible devices, and stability, to advance perovskite‐based NIR detection and imaging toward commercial applications.

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“…Perovskite/indium gallium zinc oxide (IGZO) heterostruture phototransistors have also been reported recently. [ 131–135 ] Wei et al. fabricated a hybrid quasi‐2D perovskite/IGZO heterostructure phototransistor on a PET substrate.…”

Section: Photodetectorsmentioning

confidence: 99%

“…Perovskite/indium gallium zinc oxide (IGZO) heterostruture phototransistors have also been reported recently. [131][132][133][134][135] Wei et al fabricated a hybrid quasi-2D perovskite/IGZO heterostructure phototransistor on a PET substrate. The flexible device utilized the ordered quantum well features of quasi-2D perovskites (PEA 2 MA 2 Pb 3 I 10 ) to obtain excellent photoresponsivity values of >10 5 A W −1 at 457 nm and broadband photoresponse (457-1064 nm).…”

Section: Phototransistormentioning

confidence: 99%

Emerging Perovskite Materials with Different Nanostructures for Photodetectors

Chen

Zheng

2020

Advanced Optical Materials

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In recent years, solution‐processed lead trihalide perovskites have been widely used as semiconductors in photodetectors with their salient features of tunable direct bandgap, long carrier lifetime, extended diffusion length, and high carrier mobility, etc. For the photodetector application, perovskites with different structures ranging from the traditional 3D perovskites to the emerging 2D perovskites, to 1D nanowires, and to 0D quantum dots, have been synthesized. In this perspective, the recent advances in the strategies of preparing novel lead trihalide perovskites with different nanostructures are summarized together with an overview on their application in photodetectors including photoconductors, photodiodes, and phototransistors. The semiconductor selection and structure–performance relationships of various photodetectors over the past 5 years are discussed comprehensively. Finally, a brief summary as well as an in‐depth discussion regarding the current challenges and perspectives for the future development of perovskite‐based photodetectors is presented.

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Narrow Bandgap Pb–Sn Perovskites/InGaZnO Hybrid Phototransistors for Near‐Infrared Detection

Cited by 16 publications

References 33 publications

A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

Hybrid Halide Perovskite‐Based Near‐Infrared Photodetectors and Imaging Arrays

Emerging Perovskite Materials with Different Nanostructures for Photodetectors

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