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Effective identification of multiple pathogenic bacteria in unknown samples is important for disease prevention and control but remains a challenge yet. A single-mode arraybased sensing approach is simple and sensitive, but it usually relies on the use of multiple crossreactive receptors to construct sensor arrays, which is cumbersome and insufficiently accurate. Here, we developed a sensor array with colorimetric and photothermal dual mode of differentiating multiple pathogenic bacteria. The sensor array was based on boronic acidfunctionalized Au−Fe 3 O 4 nanoparticles (BA−GMNPs), which not only possess localized surface plasmon resonance properties, showing a burgundy color similar to that of AuNPs, but also exhibit mild superparamagnetism, allowing for the differentiation of bacteria before and after binding to the nanoparticles. Immobilization of BA−GMNPs on the bacterial cell surface by covalent bonding would diminish NaCl-induced assembly of BA−GMNPs. Different BA− GMNPs@bacterial complexes differed in their ability to resist assembly and produced different colorimetric and photothermal response signals. A unique molecular fingerprint of each bacterium was obtained by linear discriminant analysis of the response patterns, demonstrating an effective differentiation among the six species studied. Compared with single-mode sensing arrays based on multiple receptors, this method only requires the preparation of a single nanomaterial, which produces two signal outputs for the identification of multiple bacteria with better differentiation. It can distinguish not only multiple pathogenic bacteria but also Gram-negative and Gram-positive bacteria, and, more importantly, it can perform preliminary discrimination of unknown samples.

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We have studied terahertz (THz) emissions from n-InAs and n-GaAs using an ensemble Monte Carlo method. Our simulations indicate that higher amplitude THz waves from n-InAs, compared with those from n-GaAs, result from the difference in the radiation mechanisms between these two samples and are not completely dependent on the most commonly recognized fact: lighter electron effective mass in n-InAs. The excitation-wavelength-dependent and doping-level-dependent THz emissions from n-InAs are found to be quite different from those from n-GaAs. The corresponding mechanisms are analyzed by the introduction of a weighted electric field, which is weighted by the photogenerated carrier density in a semiconductor. The simulated results are in good qualitative agreement with experimental observations from other authors.