Highlights Hard-carbon anode dominated with ultra-micropores (< 0.5 nm) was synthesized for sodium-ion batteries via a molten diffusion–carbonization method. The ultra-micropores dominated carbon anode displays an enhanced capacity, which originates from the extra sodium-ion storage sites of the designed ultra-micropores. The thick electrode (~ 19 mg cm−2) with a high areal capacity of 6.14 mAh cm−2 displays an ultrahigh cycling stability and an outstanding low-temperature performance. Abstract Pore structure of hard carbon has a fundamental influence on the electrochemical properties in sodium-ion batteries (SIBs). Ultra-micropores (< 0.5 nm) of hard carbon can function as ionic sieves to reduce the diffusion of slovated Na+ but allow the entrance of naked Na+ into the pores, which can reduce the interficial contact between the electrolyte and the inner pores without sacrificing the fast diffusion kinetics. Herein, a molten diffusion–carbonization method is proposed to transform the micropores (> 1 nm) inside carbon into ultra-micropores (< 0.5 nm). Consequently, the designed carbon anode displays an enhanced capacity of 346 mAh g−1 at 30 mA g−1 with a high ICE value of ~ 80.6% and most of the capacity (~ 90%) is below 1 V. Moreover, the high-loading electrode (~ 19 mg cm−2) exhibits a good temperature endurance with a high areal capacity of 6.14 mAh cm−2 at 25 °C and 5.32 mAh cm−2 at − 20 °C. Based on the in situ X-ray diffraction and ex situ solid-state nuclear magnetic resonance results, the designed ultra-micropores provide the extra Na+ storage sites, which mainly contributes to the enhanced capacity. This proposed strategy shows a good potential for the development of high-performance SIBs.

Two‐dimensional (2D) van der Waals heterostructure (vdWH)‐based floating gate devices show great potential for next‐generation nonvolatile and multilevel data storage memory. However, high program voltage induced substantial energy consumption, which is one of the primary concerns, hinders their applications in low‐energy‐consumption artificial synapses for neuromorphic computing. In this study, we demonstrate a three‐terminal floating gate device based on the vdWH of tin disulfide (SnS2), hexagonal boron nitride (h‐BN), and few‐layer graphene. The large electron affinity of SnS2 facilitates a significant reduction in the program voltage of the device by lowering the hole‐injection barrier across h‐BN. Our floating gate device, as a nonvolatile multilevel electronic memory, exhibits large on/off current ratio (~105), good retention (over 104 s), and robust endurance (over 1000 cycles). Moreover, it can function as an artificial synapse to emulate basic synaptic functions. Further, low energy consumption down to ~7 picojoule (pJ) can be achieved owing to the small program voltage. High linearity (<1) and conductance ratio (~80) in long‐term potentiation and depression (LTP/LTD) further contribute to the high pattern recognition accuracy (~90%) in artificial neural network simulation. The proposed device with attentive band engineering can promote the future development of energy‐efficient memory and neuromorphic devices.

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The growth of entirely synthetic two-dimensional (2D) materials could further expand the library of naturally occurring layered solids and provide opportunities to design materials with finely tunable properties. Among them, the synthesis of elemental 2D materials is of particular interest as they represent the chemically simplest case and serve as a model system for exploring the on-surface synthesis mechanism. Here, a pure atomically thin blue phosphorus (BlueP) monolayer is synthesized via silicon intercalation of the BlueP–Au alloy on Au(111). The intercalation process is characterized at the atomic scale by low-temperature scanning probe microscopy and further corroborated by synchrotron radiation-based X-ray photoelectron spectroscopy measurements. The evolution of the band structures from the BlueP–Au alloy into Si-intercalated BlueP are clearly revealed by angle-resolved photoemission spectroscopy and further verified by density functional theory calculations.

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