Interfacial charge transfer is a fundamental and crucial process in photoelectric conversion. If charge transfer is not fast enough, carrier harvesting can compromise with competitive relaxation pathways, e.g., cooling, trapping, and recombination. Some of these processes can strongly affect the speed and efficiency of photoelectric conversion. In this work, it is elaborated that plasmon‐induced hot‐electron transfer (HET) from tungsten suboxide to graphene is a sufficiently fast process to prevent carrier cooling and trapping processes. A fast near‐infrared detector empowered by HET is demonstrated, and the response time is three orders of magnitude faster than that based on common band‐edge electron transfer. Moreover, HET can overcome the spectral limit of the bandgap of tungsten suboxide (≈2.8 eV) to extent the photoresponse to the communication band of 1550 nm (≈0.8 eV). These results indicate that plasmon‐induced HET is a new strategy for implementation of efficient and high‐speed photoelectric devices.

The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since inter-valley scattering from non-magnetic impurities is highly suppressed by time reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is non-magnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities. 73.43.Nq,

Acquiring how the performance depends on structure is the most pivotal step of material design, preparation, and application. In particular, it is extremely significant to figure out the correlation between structure and property for two-dimensional materials possessing abundant magical features due to their unique layered stacking. Here, we first reported a conceptually theoretical method to define the boundary between intralayer and interlayer of layered structures based on total electron density distribution. According to the concept, two-dimensional structures binding by the van der Waals force could be divided into layer thickness and interlayer interaction zones. Using 2D semiconductor hexagonal boron nitride (h-BN) and molybdenum disulfide (MoS 2 ) bilayers as model systems, we successfully applied the demarcation method into revealing the intrinsic relationship between bandgap fluctuation and potential energy surface (PES) landscape induced by the stacking configuration. The presented theoretical method enables the study of not only the correlation, depending on electronic redistribution, between PES and bandgap in h-BN and MoS 2 but also other analogous physical issues, such as microcontact, the sliding between surface/ interface, and the properties (heat conduction), which depend on the thickness of the 2D atomic layer.