Typical thin-film photovoltaic cells incorporate a textured transparent conductive oxide to efficiently harvest solar energy. What should be the ideally desired morphology of this textured surface for best cell performance -is highly debated but remains an unsolved mystery. We present a comprehensive methodology to 1) accurately model, 2) extract macroscopically sufficient statistical finger-prints and 3) predict best desired values for these statistical finger-prints of such a randomly textured surface for the best performance of the cell.

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The direct photo-CVD of silicon dioxide on c-Si substrates has been achieved using a new combination of Si2H6 and N2O3 gases, with an external deuterium lamp as the VUV source. The variation of the deposition rate and the refractive index with process parameters is reported. FTIR studies on these oxides show that the oxide is very nearly stoichiometric with no Si-N bonds and only trace amounts of Si-H bonds. C-V, I-V and breakdown measurements made on these films are reported. a-Si:H thin film transistors have also been fabricated using this oxide as the gate dielectric.