Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy.

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a X-ray photoelectron diffraction (XPED) is a useful tool to analyze the surface structure. In order to reconstruct a threedimensional atomic structure, some methods based on photoelectron holography were studied. In our group, differential photoelectron holography (DPH) was proposed to reduce artifacts. DPH can be carried out by the subtraction of XPED patterns excited by different X-ray energies. It was reported that DPH is a very effective technique with large-scale synchrotron radiation. In this study, we developed a stripe-type X-ray target that can generate two different X-rays alternately at the laboratory level. Subsequently, DPH was applied to obtain the atomic image of the Cu(100) surface by the stripe-type target.

It took several hours to obtain one X-ray photoelectron diffraction (XPED) pattern because XPED measurement requires repeated acquisition of XPS as a function of emission angle. The measurement time using our previous XPED system was too long to clarify the dynamics of epitaxial growth and catalytic reaction. In the present study, in order to minimize the measurement time, we improved the software used to control the XPED system. Then, by using the improved system, we obtained information on the structural changes during the heating process of an ion-bombarded silicon surface.