The main issue of Cu metallization is the electromigration of Cu through the interface between Cu and the barrier or capping layer. To improve electromigration resistance at the Cu and barrier metal interface, insertion of a glue layer which enhances the adhesion of Cu onto the under layer may be effective. The wettability of Cu on Ru and Ta glue layers was evaluated as the index of Cu adhesion strength onto glue layers. The wetting angle of Cu (43°) on a Ru substrate was three times lower than that of Cu (123°) on a Ta substrate after annealing. Lower wetting angle of Cu on a Ru substrate indicates a good adhesion property between Cu and Ru and may imply a high electromigration resistance. The better Cu wettability of Ru compared to Ta can be explained by the concept of lattice misfit. A Ru(002) plane has lower lattice misfit, which suggests lower interface energy, and enhanced the adhesion of Cu onto Ru. However, the Ru film showed poor Cu diffusion barrier properties, which suggests Ru should be used as a glue layer in combination with another barrier layer.

We carried out investigations on electron-beam-induced nanoparticle formation in thin (5-30 nm) Au films on smooth SiO(2)/Si substrates. When the Au films were irradiated with an electron beam, the Au films broke up into nanoparticles through the dewetting process. The dominant wavelengths of the surface (corresponding to the pitch between nanoparticles) were closely related with the thickness of the Au. We then developed a new technique for the formation of periodically arranged Au nanoparticles using a holed substrate. The nanoholes induced heterogeneous nucleation and helped to form ordered nanoparticles between the holes. Two-dimensionally, periodically arranged Au nanoparticles with a pitch of 100 nm were obtained.

The electromigration resistance of ultra-large scale integration (ULSI) Cu interconnects can be improved by inserting an adhesion promoter between Cu and the diffusion barrier. A metallurgical survey was accomplished to select the element having a good Cu adhesion property. For adoption as an interconnect material, it should have a low resistivity and should not react with Cu to avoid increasing the resistance of Cu interconnects. Ru, Os, Mo, W, and Ta satisfied the above conditions. The Cu adhesion property of these elements was estimated by the lattice misfit concept. The Cu adhesion property was experimentally examined and compared hcp elements (Ru and Os), which have a good matching interface with fcc Cu, with the bcc elements (Mo and Ta). Ru and Os, which had lower lattice misfit values, showed a better adhesion property than the bcc elements having higher lattice misfit values. Among these elements, Ru had the best Cu adhesion property and thus it can be an optimum glue layer element for Cu interconnects.

We have used 45 Sc solution NMR spectroscopy to show for the first time the internal motion of the scandium ions in two Sc 2 C 84 isomers. In one isomer the two scandium ions are equivalent over the temperature range 238-433 K, whereas in the second isomer there are two inequivalent scandium ions below 383 K. At 383 K coalescence occurs, and above that temperature the scandium ions become equivalent. The processes are reversible, and we believe this is the first time such phenomena have been observed.

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