The dynamics of a single domain wall in finite glass-coated microwires is reported in the low-field regime below the switching field. The power law of the single domain wall propagating over a large distance is confirmed. Three regions are determined for the propagating domain wall. Below some critical field, H 0 , the domain wall is pinned at the wire's end. Just above that critical field, the wall moves in the adiabatic regime, interacting with the defects during its propagation, with an average velocity of v = S (H − H 0 ) β . At high field, the domain wall propagates in the viscous regime and its average velocity is proportional to the applied magnetic field, H . An analysis of the temperature dependence of the scaling factor β is further reported. It is also shown that the domain wall mobility parameter S is field-independent and is proportional to the domain wall mobility S in the viscous regime.

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In the present work we give an overview on the domain‐wall dynamics in amorphous glass‐coated microwires with positive magnetostriction. They are characterized by a peculiar domain structure that allows us to study the magnetization process of a single domain wall. The domain‐wall dynamics is characterized by at least 4 regimes. At low field, the interaction of the domain wall with the defects is observed that is characteristic for the adiabatic regime. At medium field, the domain wall moves in a viscous regime, where the domain‐wall velocity is proportional to the applied magnetic‐field amplitude. At higher fields, the domain‐wall mobility steeply increases as a result of the change of the domain‐wall structure. Finally, the domain wall reaches very high velocities, four times higher than the sound velocity measured in microwires. In some cases, the Walker limit is observed in this range. Moreover, the interaction of the domain wall with phonons was observed when the domain wall approaches the sound velocity. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Here we present the domain wall dynamics in FeNi-based microwires with positive magnetostriction. Two different ranges were found which differs by the measured domain wall mobility. At low fields, the domain wall dynamics exhibit small mobility, whereas at higher field the domain wall mobility increases. The difference in the two regimes of the domain wall dynamics is treated in terms of the different domain wall structure. At low fields, the transversal domain wall is expected, with low domain wall mobility. At high field, the vortex-type domain wall with high domain wall mobility is created.