Domain‐wall dynamics in bistable magnetic microwires

Varga, R.; Kostyk, Y.; Richter, K.; Zhukov, А.; Vázquez, M.

doi:10.1002/pssa.200881253

Cited by 18 publications

(10 citation statements)

References 20 publications

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“…4a. The inner structure relaxation of TCMFA wires is changed by two items: (i) the inner atom gathering and rearranging in a local region, and then forming long‐range ordered zones (LOZs) annealing at a relatively higher temperature; (ii) a dynamic magnetization process (domain‐wall motion or rotational magnetization) 22 along the direction of the transverse magnetic field H T . Once annealing is over, the atomic magnetic moment in LOZs is hard to recover to the initial position, and the changed domain is reserved.…”

Section: Resultsmentioning

confidence: 99%

Multiangle combined magnetic‐field annealing of Co‐based amorphous microwires for sensor applications

Liu

Zhang

Cao

et al. 2012

Physica Status Solidi (a)

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The effect of multiangle combined magnetic-field annealing (MCMFA) on the GMI performance of melt-extracted Cobased amorphous microwires for sensor applications is studied using a precision impedance analyzer. Experimental results indicated that MCMFA treatment can effectively improve the GMI effect comparing with as-cast and conventional vacuumannealed (CVA) wires. The maximum GMI ratio [DZ/Z max ] max and field response sensitivity j max of transverse combined magnetic-field annealed (TCMFA, a ¼ 908) wires can be increased at 10 MHz to 310.7 and 30.91%/Oe, respectively, through with circumferential anisotropy field expanded and GMI changed from single peak (SP) to double peaks (DPs). DPs behavior of TCMFA wire is due to the typically ''nail-sticked'' action of magnetic moment rotation at relatively high frequency (up to !1 MHz). It can therefore be concluded that MCMFA could be used to develop Co-based microwires with enhanced GMI effect for high-resolution sensor applications.

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Section: Resultsmentioning

confidence: 99%

Multiangle combined magnetic‐field annealing of Co‐based amorphous microwires for sensor applications

Liu

Zhang

Cao

et al. 2012

Physica Status Solidi (a)

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“…The propagation velocity of this 180° magnetic domain wall was measured for values of the axial magnetic field between the switching field in the case of each sample and the maximum applied field, which is 10,000 A/m in this study ( H* ≤ H ≤ H max ). In all cases, the domain wall velocity increases monotonically with the applied field, which is a typical behavior for all amorphous ferromagnetic wires [ 22 ]. The curves that illustrate the field dependence of the magnetic domain wall velocity for the investigated (Co 0.94 Fe 0.06 ) 72.5 Si 12.5 B 15 submicronic amorphous wire samples are shown in Figure 3 .…”

Section: Resultsmentioning

confidence: 99%

Stochastic Magnetization Switching in Rapidly Solidified (Co0.94Fe0.06)72.5Si12.5B15 Amorphous Submicronic Wires

et al. 2022

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Submicrometric magnetic amorphous wires are good candidates for future development of miniaturized sensors and magnetic logic applications. Here we report the results of an in-depth investigation of magnetization switching in rapidly solidified nearly zero magnetostrictive (Co0.94Fe0.06)72.5Si12.5B15 amorphous samples with diameters of the actual magnetic wires between 300 and 450 nm. All samples were found to be magnetically bistable, displaying characteristic rectangular hysteresis loops. This shows that magnetization reversal occurs through the depinning and subsequent propagation of a magnetic domain wall, whose velocity depends on the applied field and on the sample dimensions. The results of this study reveal stochastic nonlinear dependencies of both the magnetic switching field and the domain wall velocity on the sample diameter. The analysis of the potential causes, which include nonlinear residual stresses, fluctuations in wire dimensions (metal and glass), and competing magnetic anisotropies of different origins, show that a combination of all three factors could lead to the observed stochastic behavior. Calculated values of the switching field, which consider only changes in the wire dimensions, indicate that such influence alone cannot account for the strong nonlinearities. The results are important for the applications of such ultrathin cylindrical magnetic amorphous wires.

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“…Concerning the presence of three DW velocity regimes in Figure 10, we ascribe the low-field and intermediate-field regimes to the previously described adiabatic and viscous regimes, accounted for in Equation ( 8) and ( 7), respectively. [67] In the low-field regime, the DW has low mobility and a negative critical propagation field, whereas in the viscous (stationary) regime, an increased and constant DW mobility result in the observed linear behavior.…”

Section: Different Regimes Of the Dw Propagation Versus Driving Fieldmentioning

confidence: 97%

Matteucci Effect and Single Domain Wall Propagation in Bistable Microwire under Applied Torsion

Jiménez

Calle

Fernández-Roldán

et al. 2021

Physica Status Solidi (a)

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On the Matteucci Effect and the Bistable Behavior in Microwires under Applied TorsionThe effects of an electrical current flowing through magnetic nanostructures are connected to several underlying novel phenomena that offer new opportunities for electronics technology or "spintronics." [1] For instance, spin-polarized current gives rise to the spin transfer-torque effect, in which the magnetization orientation in a magnetic layer of a tunnel junction or spin valve can be modified. In magnetic storage technologies, the design of writing and reading magnetic bits in high-speed devices profits of the effect induced by small current to inject domain walls (DWs), or to modify their motion characteristics (i.e., race track memories for magnetic storage or in logic devices). [2][3][4] Most of the studies have been conducted in Permalloy lithography nanostripes, where the shape determines the magnetic anisotropy characteristics. There, vortex and transverse DWs are injected or trapped in artificial notches or by local stray fields. [5,6] In cylindrical nanowires, the geometrical symmetry imposes significant differences. The motion of DWs was numerically solved using the Landau-Lifshitz-Gilbert equation, involving all different energy terms, where transverse or vortex DWs are, respectively, obtained for diameters smaller or larger than the exchange length of the corresponding material. [7] More recently, electrochemically grown cylindrical nanowires with diameter in the range 40-400 nm have been investigated experimentally and modeled by micromagnetic simulations. There, the magnetization reversal is typically activated by the propagation of a vortex DW which due to cylindrical geometry is also labeled as Bloch-point DW. [8,9] With the increase in diameter, as is the case of magnetic microwires fabricated by ultrarapid solidification techniques, new observations and opportunities are offered. They are fabricated in a continuous way with up to hundred-meter length and diameter in the range 0.1-90 μm for the so-called glass-coated microwires [10][11][12] and around 120-180 μm for the in-waterquenched ones. [13] Such ultrarapid solidification techniques introduce very strong mechanical stresses that determine most of the magnetic properties which have been reviewed in other studies. [14][15][16]

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Domain‐wall dynamics in bistable magnetic microwires

Cited by 18 publications

References 20 publications

Multiangle combined magnetic‐field annealing of Co‐based amorphous microwires for sensor applications

Multiangle combined magnetic‐field annealing of Co‐based amorphous microwires for sensor applications

Stochastic Magnetization Switching in Rapidly Solidified (Co0.94Fe0.06)72.5Si12.5B15 Amorphous Submicronic Wires

Matteucci Effect and Single Domain Wall Propagation in Bistable Microwire under Applied Torsion

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