SiGe has been utilized for aggressive CMOS technologies development recently and there are many literatures talking about the advantages brought by it. However, few publications discuss the impacts from both mechanical strain and Ge doping on boron diffusion. Moreover these effects have mostly been studied at low boron concentrations and with long high temperature anneals. They are not the possible conditions used in aggressive CMOS technologies. An experiment has been therefore designed to investigate boron diffusion in both strained and strain-relaxed SiGe including ultra-low energy, high concentration boron implant and spike RTA. Summarily, this paper describes the experiments, calibration and resulting diffusion constants for an ultra-shallow boron junction in SiGe that is popular in advanced CMOS technology.
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