This study introduces a method for copper film growth with Cl 2 plasma. The method consists of two stages: generation of the precursor, CuCl, by etching a bulk copper target, and reduction of CuCl adsorbed on a substrate surface. In both reactions, atomic chlorine ͑Cl*͒ generated from the same Cl 2 plasma played the leading role. Copper films were grown on a TaN film ͑50 nm͒ adhesively at a growth rate of 118 nm/min. The obtained copper films had a resistivity of 2.0 ⍀ cm and a Cl content of less than 15 ppm. This method also makes it possible to fill the 0.1 m gap with an aspect ratio of 10.

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