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We investigated the annealing effect on single Shockley faults (SSFs) in the SiC epitaxial layers by photoluminescence mapping in combination with high-power laser illumination. Comparing before and after annealing at 350–550°C, it became obvious that annealing results in the shrinking of the faulted area of SSFs. When high-power laser illumination is performed again on the same area annealed at 550°C, the right-angled triangular SSFs reformed into exactly the same features as those before annealing, but the isosceles triangular SSFs did not reform. The annealing temperature to start shrinking the faulted area differs according to the type of SSF.

Nonadiabatic alignment of rotationally cold N2 molecules is optimally controlled by shaping femtosecond pump pulses with the feedback of degree of alignment evaluated by an ion imaging technique. The alignment is optimized by doubly peaked pulses with approximately equal intensities. A doubly peaked pulse with an appropriate interval can be regarded as a single pulse with a center trough based on the considerations from both time and frequency domains, suggesting that the effective duration of a doubly peaked pulse rather than its structure is crucial to nonadiabatic molecular alignment.

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