INTRODUCTIONA numerical model for the process of reduction andThe ITmk3 process is a new technology for producing meltdown of iron ore-carbon pellets has been reduced iron from composite pellets. It is currently being developed. The model covers the devolatilisation of developed by Kobe Steel.1-3 In this process, carbon containcoal, a set of gaseous reduction reactions by carbon ing pellets are heated such that reduction and gas generation monoxide and hydrogen and reactions for the reactions occur simultaneously.Temperatures above 1350°C formation of reducing gases. Carburisation of permit the formation of liquid iron and slag phases. Under reduced iron and its subsequent meltdown is an adequate processing conditions, metal and slag separate in important high temperature feature of the model. a clean manner. Transport of heat and gases is included, the latter The product, iron nuggets, is obtained in a couple of using a specific isobaric approach. Model minutes with almost no residuals and adjustable carbon computations have been applied to a number of contents of up to 3•5%. The content of FeO in both metal test cases with variable ore-reductant combinations and slag is low. Because the material is not pyrophoric, and temperatures. Computed results match transportation is easy. The ITmk3 product can be used as reasonably well with the results of laboratory tests. feed in the electric arc furnace (EAF) to substitute for scrap The reactions are found to occur in a complex or in basic oxygen furnace (BOF) steelmaking. sequence with main steps as follows: devolatilisation Iron ore reduction involving iron-carbon mixtures has and gas evolution, gaseous reduction and been under discussion for a long time,4,5 but only recently Boudouard reaction, carburisation of solid iron and have industrial processes been implemented, such as Fastmet,6 finally formation of liquid iron. The limits and Comet,7 Inmetco and derivatives.8 These technologies all potential use of the model are discussed. I&S/1663 work below 1300°C. The ITmk3 process is diVerent in that it operates at At the time the work was carried out, Dr Meissner and Dr Tacke were temperatures which allow meltdown. The starting point of at the Max-Planck-Institut fu ¨r Eisenforschung GmbH, Du ¨sseldorf,

Stress-induced migration resistance and contacts to silicon of Al–0.3%Pd–1%Si interconnections for submicron process integrated circuit devices have been investigated and compared to Al–0.5%Cu–1%Si. Using creep tests, Pd has been found to be an excellent additional element to Al for reducing grain boundary diffusion. Palladium improved the stress-induced migration resistance and reduced void and hillock formation in Al–Si conductors. Aluminum palladium precipitates in Al–Pd–Si alloys were found to be formed at higher temperatures than aluminum copper compounds and may be the reason for the improvements. The contact resistance of Al–Pd–Si was found to be similar to that of Al–Cu–Si. The reliability and yield data from 1.2 μm ROM test devices using Al–Pd–Si conductors is better than that of Al–Cu–Si conductors.

Cost of silicon carbide (SiC) wafer has been improved owing to the development of larger and higher quality wafer technologies, while the process stays long and complicated. In this paper, we propose a novel short process of ion implantation and provide the fabrication model SiC schottky barrier diodes (SiC-SBDs) devices. Currently common mask layer of ion implantation employs high heat resistant materials such as metal oxides. Because the ion is implanted to SiC wafer at high temperature between 300 °C and 800 °C due to avoid the damage of SiC crystal structure. The process using oxide layer tends to became long and complicated. On the other hand, our proposal process uses a heat resistant photoresist material as the mask instead of the oxide layer. The heat resistant photoresist is applied to newly developed SP-D1000 produced by Toray Industries, Inc.. We demonstrated to fabricate model SiC-SBDs devices based on our proposal process with SP-D1000 and confirmed the device working as same as a current process.

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Cost of silicon carbide (SiC) wafer has been improved owing to the development of larger and higher quality wafer technologies, while the process stays long and complicated. In this paper, we propose a novel short process of ion implantation and fabricate model SiC schotky barrier diodes (SiC-SBDs) devices. Currently common mask layer of ion implantation employs high heat resistant materials such as metal oxides. Because the ion is implanted to SiC wafer at high temperature between 300 o C and 800 o C due to avoiding the damage of SiC crystal structure. The process using oxide layer tends to became long and complicated. On the other hand, our proposal process uses a heat resistant photoresist material as the mask instead of the oxide layer. The heat resistant photoresist is applied to newly developed "SP-D1000" produced by Toray Industries, Inc.. We demonstrated to fabricate the model SiC-SBDs devices based on our proposal process with "SP-D1000" and confirmed the device working as same as a current process.