The 70%Pb(Mg1∕3,Nb2∕3)O3–30%PbTiO3 (PMNT) films have been fabricated on LaNiO3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for the growth of PMNT films, which depresses the formation of pyrochlore phase and induces the high (100) preferred orientation of perovskite PMNT films. Compared with the PMNT films grown on platinum bottom electrode, the ferroelectric properties of PMNT films grown on LNO are enhanced. The frequency dependence of complex permittivity from PMNT films on LNO is the conjunct result of polarization relaxation and movement of oxygen vacancy, which can be fitted by the function containing Debye and universal dielectric response models, respectively.

Ca Cu 3 Ti 4 O 12 (CCTO) thin films are prepared by a sol-gel method on LaNiO3-coated silicon and Pt∕TiO2∕SiO2∕Si substrate. Compared with the films on Pt, the CCTO on LaNiO3 exhibits a (400) orientation. Dielectric loss of CCTO on LaNiO3 is lower than 0.25 within 100Hz–10kHz, lower than the reported value of CCTO grown on Pt∕TiO2∕SiO2∕Si by pulse laser deposition. Possible reason is that LaNiO3 acts as seed layer for the growth of CCTO. The crystallinity of CCTO is improved and the dielectric properties are enhanced. Complex impedance spectrum of CCTO on LaNiO3 is discussed according to grain boundary barrier layer capacitance model.

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Influence of composition on structure, morphology and dielectric properties of Bi x Al y O z composite films synthesized by atomic layer deposition Cite as: AIP Advances 7, 045120 (2017); https://doi