Gas sensors have been fabricated from multiwalled carbon nanotubes (MWNTs) coated with a thin tin oxide layer, and have been used to detect oxidizing and reducing gases down to a ppm level. The barriers between the tin oxide nanocrystal grains on the MWNTs dominate the sensor resistance in different gases, and the conducting carriers in the MWNTs have a low resistance, which make the resistance of the sensors much lower than that of SnO2 nanobelt sensors. The resistance is 130kΩ in air, 230kΩ in 2ppm NO2, and 2.8MΩ in 50ppm NO2, so that impedance matching with amplifying circuits can be easily achieved.

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We report on field emission from SnO2 nanobelt arrays with the length of about 90 μm grown on silicon substrates. The turn-on field of the nanobelt arrays at the current density of 1μA∕cm2, is 4.5, 3.0, 2.4, and 2.3V∕μm as the distance between anode and cathode (d) is 0.1, 0.2, 0.35, and 0.5 mm, respectively. The current density rapidly reaches 2.1mA∕cm2 at the electrical field of 4.4V∕μm at d=0.35mm. The current density is higher than or comparable to those of the carbon nanotubes and other one-dimensional nanostructured materials. We also discuss the mechanism of high current densities and estimate the enhancement factor according to both the Fowler–Nordheim law and the reported model on micrometer-long of carbon nanotubes.

Anisotropic materials, especially two-dimensional (2D) layered materials formed by van der Waals force (vdW) with low-symmetry, have become a scientific hot-spot because their electrical, optical, and thermoelectric properties are highly polarization dependent. The 2D GeSe, a typical anisotropic-layered orthorhombic structure and narrow bandgap (1.1−1.2 eV) semiconductor, potentially meets these demands. In this report, the ultrathin elongated hexagonal GeSe nanoplates were successfully synthesized by the rapid physical vapor deposition method developed here. The ultrathin elongated hexagonal GeSe nanoplates have a zigzag edge in the long edge and an armchair edge in the short edge. In addition, the typical Raman mode exhibited 90°p eriodic vibration, having its maximum intensity between the zigzag direction or the zigzag and armchair direction, indicating an anisotropic electron−phonon interaction. Furthermore, the field effect transistor devices based on the elongated hexagonal GeSe nanoplates were constructed and exhibited the p-type semiconducting behavior with a high photoresponse characteriscs. Finally, the polarized sensitive photocurrent was identified, further revealing the intrinsically anisotropy of the GeSe nanoplate. The results illustrated here may give a useful guidance to synthesize the 2D-layered anisotropic nanomaterials and further advance the development of the polarized photodetector.

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz1∕2 and 20 aA/Hz1∕2, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.