A clathrate NH4Br@HKUST-1 has been prepared by means of soaking the metal-organic-framework, HKUST-1, in ammonium bromide saturated ethanol solution at ambient temperature. Both NH4Br@HKUST-1 and HKUST-1 show the same framework structure. The formula of the clathrate is approximately expressed as Cu3(BTC)2(NH4Br)1.15. The thermal stability of the metal-organic framework is not affected by incorporating ammonium bromide into its pores. The impedance spectra measurements were performed for both NH4Br@HKUST-1 and HKUST-1 in anhydrous and selected relative humidity environments, disclosing that the conductivity of NH4Br@HKUST-1 is enhanced by three/four orders of magnitude under the same conditions with respect to HKUST-1. This study provided an efficient strategy to achieve new high conductivity proton transport materials.

Ta-Zr-N thin films were fabricated through co-deposition of radio-frequency magnetron sputtering and high-power impulse magnetron sputtering (HIPIMS/RFMS co-sputtering). The oxidation resistance of the fabricated films was evaluated by annealing the samples in a 15-ppm O 2 -N 2 atmosphere at 600 • C for 4 and 8 h. The mechanical properties and surface roughness of the as-deposited and annealed thin films were evaluated. The results indicated that the HIPIMS/RFMS co-sputtered Ta-Zr-N thin films exhibited superior mechanical properties and lower surface roughness than did the conventional direct current-sputtered Ta-Zr-N thin films and HIPIMS-fabricated ZrN x thin films in both the as-deposited and annealed states.