In neural system, both spike-timing-dependent plasticity (STDP) and conditioned reflex are vital synaptic learning mechanisms to regulate advanced neural activities, being associated with temporally coupled stimuli. Thus, realization of STDP and conditioned reflex on a single solid-state device may open up new opportunities for neuromorphic engineering. Here, restickable chitosan-gated oxide neuromorphic transistors are fabricated on polyimide tape. Based on protonic electrochemical doping/de-doping processes at indium-tin-oxide/chitosan interfaces, four types of STDP learning rules are successfully demonstrated, including Hebbian STDP, anti-Hebbian STDP, symmetrical STDP, and visual STDP. Trained with Hebbian STDP, Pavlovian associative learning and extinction behaviors are demonstrated successfully on a single-oxide neuromorphic transistor. No complex device circuits are needed. It is interesting to note here that the devices can be pasted on different holders with different curvature radii without degrading the transistor performances and STDP learning rules. Moreover, the proposed oxide neuromorphic transistors can be dissolved in deionized water easily. The results here indicate potential applications of the proposed restickable oxide neuromorphic transistors in flexible neuromorphic cognitive platforms.

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Neuromorphic devices and systems with ultralow power consumption are important in building artificial intelligent systems. Here, indium tin oxide (ITO)-based oxide neuromorphic transistors are fabricated using poly(vinyl alcohol) (PVA)-based proton-conducting electrolytes as gate dielectrics. The electrical performances of the transistors can be modulated with the ITO channel thickness. Fundamental synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, and multistore memory, are successfully emulated. Most importantly, the PVA-gated neuromorphic devices demonstrate ultralow energy consumption of ∼1.16 fJ with ultrahigh sensitivity of ∼5.4 dB, as is very important for neuromorphic engineering applications. Because of the inherent environmental-friendly characteristics of PVA, the devices possess security biocompatibility. Thus, the proposed PVA-gated oxide neuromorphic transistors may find potential applications in "green" ultrasensitive neuromorphic systems and efficient electronic biological interfaces.