Although vanadium dioxide (VO 2 ) exhibits the most abrupt metal-to-insulator transition (MIT) properties near room temperature, the present regulation of their MIT functionalities is insufficient owing to the high complexity and susceptibility associated with V 4+ . Herein, we demonstrate a spark plasma-assisted reactive sintering approach to simultaneously achieve in situ doping and sintering of VO 2 within a largely short period (∼10 min). This enables high convenience and flexibility in regulating the electronic structure of VO 2 via dopant elements covering Ti, W, Nb, Mo, Cr, and Fe, leading to a wide adjustment in their MIT temperature (T MIT ) and basic resistivity (ρ). Furthermore, the mechanical strength of the doped VO 2 is meanwhile largely improved via the compositing effect of the highmelting-point dopant oxide. The high adjustability in MIT properties and improved mechanical properties further pave the way toward practical applications of VO 2 in power electronics, thermochromism, and infrared camouflage.

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