No abstract

We have demonstrated the presence of a dislocation-related component and a component due to oxygen precipitates in a broad deep-level photoluminescence (PL) band in multicrystalline Si at room temperature. In PL intensity mapping, the lower-energy side of the deep-level PL band at about 0.79 eV appeared as a dark line along a small-angle grain boundary (SA-GB) surrounded by a bright band on either side, while the higher-energy side at about 0.87 eV as a bright line along the SA-GB. These intensity variations agree with the low-temperature PL intensity patterns for well-established dislocation-related lines of D1/D2 and those for oxygen precipitates, respectively. These patterns were observed around SA-GBs with a misorientation angle of 1–2°, and were assumed to be due to the distribution of secondary defects or impurities trapped by the strain field around dislocation clusters forming SA-GBs and that of preferential oxygen precipitation on the dislocations. A spectral component associated with the D3/D4 lines was also extractable from the deep-level PL at about 0.94 eV. The intensity increased on SA-GBs with the angle of <1°, where oxygen precipitation did not occur. This corresponds to the generally accepted idea that the D3/D4 lines are related to the intrinsic nature of dislocations.

US and Japanese physicians differed when communicating directly with the child about his or her cancer. The impact of these practices on children and their parents should be explored and the parent and child's perspectives elicited. This information will help facilitate culturally sensitive patient and family centered communication.

Previously, open circuit voltage of 960mV was reported on Se-free Cu(In,Ga)S 2 solar cell with CdS buffer layer. In this paper, we report our latest progress toward 1000mV on Se-free Cu(In,Ga)S 2 solar cell with Cd-free buffer layer. Highest open circuit voltage of 973mV was demonstrated by rapid thermal annealing and Zn 1-x Mg x O buffer layer application. Index Terms-Cu(In,Ga)S 2 , High open circuit voltage, Rapid thermal annealing, Zn 1-x Mg x O buffer layer.

Differences in US and Japanese paediatric oncologist responses in return to school issues may reflect larger cultural issues such as: benefits and disadvantages to telling the child that he/she has cancer; hospitalization practices; and the availability of school re-entry programs. More needs to be learned about how children, their families and schools prefer to have re-entry issues handled during and after treatment and how these approaches affect the child's re-entry into school.