Photolithography is a leading technique in LSI device fabrication. The LSI pattern size has approached the exposure wavelength such as the g or i-line of a Hg lamp. This fact indicates that the shorter wavelength or some novel technique will be needed in order to cope with finer patterns. It is known that annular illumination can improve the depth of focus and resolution. We applied the annular illumination method to the step and repeat exposure system. Experiments and simulations using annular illumination were carried out and subhalf-micron patterns were produced. The process latitudes of the annular illumination method are evaluated.

Stimulated scattering in the presence of dust charge fluctuations is studied.The dispersion relation for stimulated Brillouin scattering (SBS) including the effect of dust and charge fluctuations is derived and the resonance absorption of radiation is discussed.

A super resolution technique has been developed in order to support next-generation devices. We found that the super resolution technique was effective for smaller patterns but not for larger ones, leading to the restriction of its applicability. In order to obtain wider applicability, we propose a new optical system which has been improved and is applicable to all kinds of mask patterns. According to the proposed optical system, the mask pattern produces a specific source shape preferable for the mask pattern itself. Then the mask pattern is illuminated by this self-optimized illumination source. Thus optimal improvements can be obtained under the same illumination conditions, even if conventional patterns and phase-shift patterns of spatial frequency modulation types and diffracted amplitude modulation types are on the same photomask. Consequently, the super resolution technique will be brought into full use by this optical system.

Various methods have been developed to overcome the limitations in photolithography. Modified illumination and phase shift mask technologies have been developed in order to improve the depth of focus and resolution limit. We have combined these two methods and applied them to the step and repeat exposure system. Experiments using the modified illumination were carried out and subhalf-micron patterns were produced. The process latitude of 64M dynamic random access memory (DRAM) is doubled by this combination process.

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