Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.

The Telescope Array (TA) collaboration has measured the energy spectrum of ultra-high energy cosmic rays (UHECRs) with primary energies above 1.6 × 10 18 eV. This measurement is based upon four years of observation by the surface detector component of TA. The spectrum shows a dip at an energy of 4.6 × 10 18 eV and a steepening at 5.4 × 10 19 eV which is consistent with the expectation from the GZK cutoff. We present the results of a technique, new to the analysis of UHECR surface detector data, that involves generating a complete simulation of UHECRs striking the TA surface detector. The procedure starts with shower simulations using the CORSIKA Monte Carlo program where we have solved the problems caused by use of the "thinning" approximation. This simulation method allows us to make an accurate calculation of the acceptance of the detector for the energies concerned.

The Telescope Array (TA) experiment, located in the western desert of Utah,USA, is designed for observation of extensive air showers from extremely high energy cosmic rays. The experiment has a surface detector array surrounded by three fluorescence detectors to enable simultaneous detection of shower particles at ground level and fluorescence photons along the shower track. The TA surface detectors and fluorescence detectors started full hybrid observation in March, 2008. In this article we describe the design and technical features of the TA surface detector.Comment: 32 pages, 17 figure

We report on selective-area growth of vertically aligned GaAs nanowires on Si(111) substrate. Modification of the initial Si(111) surface by pretreatment under an AsH(3) atmosphere and low-temperature growth of GaAs were important for controlling the growth orientations of the GaAs nanowire on the Si(111) surface. We also found that the size of openings strongly affected the growth morphology of GaAs nanowires on Si(111). Small diameter openings reduced the antiphase defects and improved the optical properties in the GaAs nanowires. Moreover, we realized coherent growth without misfit dislocation at the GaAs/Si interface. Finally, we demonstrated fabrication of a GaAs/AlGaAs core-shell nanowire array on a Si surface and revealed that the luminescence intensity was markedly enhanced by passivation effects. These results are promising for future III-V nanowire-based optoelectronic integration on Si platforms.

We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of crystal structures depending on the growth conditions. InP nanowires were grown on InP substrates where the mask for the template of the growth was defined. The nanowires were grown only in the opening region of the mask. It was found that uniform array of InP nanowires with hexagonal cross section and with negligible tapering were grown under two distinctive growth conditions. The nanowires grown in two different growth conditions were found to exhibit different crystal structures. It was also found that the orientation and size of hexagon were different, suggesting that the difference of the growth behavior. A model for the transition of crystal structure is presented based on the atomic arrangements and termination of InP surfaces. Photoluminescence measurement revealed that the transition took place for nanowires with diameters up to 1 microm.