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Using plasma enhanced chemical vapor deposition and Sic and carbon buffer layers, we have obtained carbon nitride thin films on Si(100) and Si(1ll). The x-ray diffraction and x-ray photoelectron spectroscopy are used to characterize the thin films. The Vickers hardness of the carbon nitride thin films is more than 5100kgf/mm2 and comparable to that of diamond,

Preparation of GaN Thin Films by Reactive Ionized Cluster Beam Technique *MENG Xian-quan(sE&), ZHAO Chun(B%), WANG Qiong(E%), ZHANG Guan-ming(%% sa), LUO Hai-lin(p$#), YE Ming-sheng(wg%), GUO Hu~-xi(BP'C;r\@), FAN Xiang-.b(%&%)