The feasibility of SiC optoinjected Buried Charge-Coupled Devices has been studied by means of computer simulation. The transfering and the signal charge storage characteristics of the devices have been demonstrated. For a device with optimized structure parameters, the stored electron number per unit area is up to ~ 1.746×10 11 cm -2 and the stored electron is 2.262×10 7 electron. The device reaches the highest response at the wavelength of 290 nm, and it can work stably in wave range of 200 nm ~ 290 nm. Therefore it will be beneficial to the detection of solar-blind region. Device can detect a ultraviolet light with power density as low as 0.001 mW/cm 2 and area density of the stored electrons is 1.592×10 10 cm -2 when light power density is changed.

An SiC optoinjected charge-coupled device with buried channels (BCCD) is designed for the detection of ultraviolet light (UV), and its feasibility is studied by means of Silvaco numerical simulation software. Charge storage and transfer characteristics of the BCCD can be conformed by simulation results. The buried channel design is a key point to realize the high sensitivity of the device. The channel mobility of electrons in the 6H-SiC BCCD can be changed from 47 to 200 cm 2 /(V s) when the channel is replaced from surface to the subsurface of 0.2 m. With the optimized device parameters, the density of stored electrons can reach up to 1.062 10 11 cm 2 and the number of stored electrons is up to 1.826 10 8 for UV light with wavelengths from 200 to 380 nm and an intensity of 0.1 W/cm 2 under a driving voltage of 15 V at room temperature.