A feasibility study on SiC optoinjected charge-coupled devices

Abstract

The feasibility of SiC optoinjected Buried Charge-Coupled Devices has been studied by means of computer simulation. The transfering and the signal charge storage characteristics of the devices have been demonstrated. For a device with optimized structure parameters, the stored electron number per unit area is up to ~ 1.746×10 11 cm -2 and the stored electron is 2.262×10 7 electron. The device reaches the highest response at the wavelength of 290 nm, and it can work stably in wave range of 200 nm ~ 290 nm. Therefore it will be beneficial to the detection of solar-blind region. Device can detect a ultraviolet light with power density as low as 0.001 mW/cm 2 and area density of the stored electrons is 1.592×10 10 cm -2 when light power density is changed.