We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (P Cd = 10 2-10 5 Pa) at 800-1100 K, and investigated their electrical properties at high-and low-temperature. The influence of impurities on 2 Cd) 0. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

We evaluated the effect of high-temperature treatment of Cd 0.9 Zn 0.1 Te:In single crystals using Hall-effect measurements, medium-and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ~730 K sharply increased the electrical conductivity (by ~1-2 orders-of-magnitude). Plots of the temperature-and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kröger's theory of quasi-chemical reactions between point defects in solids.

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