Compensation mechanism of bromine dopants in cadmium telluride single crystals

Abstract

We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (P Cd = 10 2-10 5 Pa) at 800-1100 K, and investigated their electrical properties at high-and low-temperature. The influence of impurities on 2 Cd) 0. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

Modeling of Structure, Thermodynamic Properties and Phase Transition Temperaturesof II-VI Crystals

“…The visualization of the spatial structures was carried out using Chemcraft. The adequacy of the proposed calculation method is confirmed by number of papers on this subject and convergence of calculated data with experimental results [5][6][10][11].…”

Thermodynamics of defect subsystem in zinc telluride crystals

“…We used the method of differentiation of Gibbs energy G with respect to defect concentration to determine these potentials. The Gibbs energy is represented as 13 :…”

“…In particular, the method of thermodynamic potentials is very promising in this task 13 and is the reason why used in this paper. In this case, the possibility of formation of the neutral, and singly and doubly ionized vacancies in the cation and anion sublattices is considered.…”

Semiempirical Energies of Vacancy Formation in Semiconductors

“…The determination procedure for the chemical potentials of defects includes the differentiation of the Gibbs energy of a crystal, , with respect to the defect concentration. The Gibbs energy can be expressed in the form [9,[61][62][63][64] = 0 + ∑︁ (…”

“…The energy of neutral defect formation and the variation of the atomic vibration fre- quency in vicinities of defects are the model parameters, which are fitted to achieve the best agreement between the theoretical and experimental dependences ( , ). Concerning A II B VI and A IV B VI compounds, the most reliable information on the dependence of the free charge concentration in them on the technological parameters of a two-temperature annealing is available for zinc [62,63], cadmium [9,61], and lead [64] tellurides. The defect concentrations were determined, by numerically solving the system of equations (34), (35).…”