Supercapacitors with porous carbon structures have high energy storage capacity. However, the porous nature of the carbon electrode, composed mainly of carbon nanotubes (CNTs) and graphene oxide (GO) derivatives, negatively impacts the volumetric electrochemical characteristics of the supercapacitors because of poor packing density (<0.5 g cm(-3)). Herein, we report a simple method to fabricate highly dense and vertically aligned reduced graphene oxide (VArGO) electrodes involving simple hand-rolling and cutting processes. Because of their vertically aligned and opened-edge graphene structure, VArGO electrodes displayed high packing density and highly efficient volumetric and areal electrochemical characteristics, very fast electrolyte ion diffusion with rectangular CV curves even at a high scan rate (20 V/s), and the highest volumetric capacitance among known rGO electrodes. Surprisingly, even when the film thickness of the VArGO electrode was increased, its volumetric and areal capacitances were maintained.

Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.

An anti-solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non-stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non-stacked GO powder, which clearly shows ideal supercapacitor behavior.

A step‐by‐step strategy is reported for improving capacitance of supercapacitor electrodes by synthesizing nitrogen‐doped 2D Ti2CTx induced by polymeric carbon nitride (p‐C3N4), which simultaneously acts as a nitrogen source and intercalant. The NH2CN (cyanamide) can form p‐C3N4 on the surface of Ti2CTx nanosheets by a condensation reaction at 500–700 °C. The p‐C3N4 and Ti2CTx complexes are then heat‐treated to obtain nitrogen‐doped Ti2CTx nanosheets. The triazine‐based p‐C3N4 decomposes above 700 °C; thus, the nitrogen species can be surely doped into the internal carbon layer and/or defect site of Ti2CTx nanosheets at 900 °C. The extended interlayer distance and c‐lattice parameters (c‐LPs of 28.66 Å) of Ti2CTx prove that the p‐C3N4 grown between layers delaminate the nanosheets of Ti2CTx during the doping process. Moreover, 15.48% nitrogen doping in Ti2CTx improves the electrochemical performance and energy storage ability. Due to the synergetic effect of delaminated structures and heteroatom compositions, N‐doped Ti2CTx shows excellent characteristics as an electrochemical capacitor electrode, such as perfectly rectangular cyclic voltammetry results (CVs, R2 = 0.9999), high capacitance (327 F g−1 at 1 A g−1, increased by ≈140% over pristine‐Ti2CTx), and stable long cyclic performance (96.2% capacitance retention after 5000 cycles) at high current density (5 A g−1).