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<sec>In recent years, amorphous InGaZnO thin-film transistor (InGaZnO TFT) has attracted intensive attention. Due to its high mobility, low off-state current, and excellent uniformity over large fabrication area, the InGaZnO TFTs promise to replace silicon-based TFTs in flat panel displays, optical image sensors, touch sensing and fingerprint sensing area. The on-state performances of InGaZnO TFT are used in thin film transistor liquid crystal display, active-matrix organic light emitting display, etc. Consequently, numerous on-current models have been proposed previously. However, for lots of the emerging sensing applications such as optical image sensors, the leakage current of InGaZnO TFTs is critical.</sec><sec>Previous literature has shown that the leakage current generation mechanisms in TFTs include trap-assisted thermal emission, trap-assisted field emission, inter-band tunneling, and auxiliary thermal electron field emission containing Poole-Frenkel effect. However, up to now, there has been few reports on the leakage current model of InGaZnO TFT, which hinders further the development of emerging applications in InGaZnO TFTs for sensor and imagers integrated in display panels.</sec><sec>In this paper, the leakage current model of InGaZnO TFT is established on the basis of carrier generation recombination rate. The feasibility of the proposed model is proved by comparing the TCAD simulations with the measured results. In addition, the influences of geometrical parameters on the leakage current of InGaZnO TFT, i.e. the channel width, the active layer thickness, and the gate dielectric thickness, are analyzed in detail. This research gives insightful results for designing the sensors and circuits by using the InGaZnO TFTs.</sec>

An analytical drain current model on the basis of the surface potential is proposed for indium–gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with an independent dual-gate (IDG) structure. For a unified expression of carriers’ distribution for the sub-threshold region and the conduction region, the concept of equivalent flat-band voltage and the Lambert W function are introduced to solve the Poisson equation, and to derive the potential distribution of the active layer. In addition, the regional integration approach is used to develop a compact analytical current–voltage model. Although only two fitting parameters are required, a good agreement is obtained between the calculated results by the proposed model and the simulation results by TCAD. The proposed current–voltage model is then implemented by using Verilog-A for SPICE simulations of a dual-gate InGaZnO TFT integrated inverter circuit.

Background: Dyslipidemia is a factor affecting the occurrence and development of many chronic diseases. With its prevalence increasing year by year, dyslipidemia has caused a huge burden of disease and economy in China and even the world. Appropriate health management is imperative for people with risk factors for dyslipidemia. However, the traditional health management service models mainly focus on the population with chronic diseases. Therefore, we need to establish new models of health management services to more appropriately manage people with risk factors for dyslipidemia. Methods: Among the 5 administrative districts with a population of more than 100,000 in Shenyang, 23 community health service centers with an average daily outpatient number of more than 50 were selected. A total of 5,032 subjects with risk factors for dyslipidemia who met the inclusion criteria were included in this study. Using prospective cohort study methods. The subjects were followed up for 24 months. They were randomly divided into control group and test group , and received integration of general practice and personalized disease prevention in health management (IGPDP) or traditional health management services, respectively. We analyzed and compared changes in disease prevention, health protection, and health promotion between the two groups at baseline, 12 months after the intervention, and 24 months after the intervention.Results: In terms of disease prevention, we found that after the intervention, participants' behavioral risk factors (smoking, diet, sedentary) improved and their health literacy improved. In terms of health protection, we observed a decrease in BMI (biological risk factor), a gradual improvement in blood lipid levels, and an overall increase in quality of life scores. In terms of health promotion, after the intervention, the proportion of the subjects willing to accept the contracted services of general practitioners increased.Conclusion: IGPDP can effectively cultivate healthy lifestyle of subjects, improve health literacy, reduce biological risk factors, reduce the risk of dyslipidemia, and improve subjects' quality of life. IGPDP is conducive to improving the service quality of general practitioners, the trust of the general public, and facilitating the establishment of a hierarchical medical system.