Binary photoresponse characteristics can help realize optical signal processing and logic operations. UV photodetectors (PDs) with SnS x nanoflakes and TiO2 nanorod arrays (NRs) show a novel binary photoswitching behavior (change in current from positive to negative) by manipulating the light wavelength without an external power source, utilizing the interfacial recombination of the photogenerated carriers in the type-I SnS x /TiO2 heterojunctions. The enhanced responsivity (R*), detectivity (D* ), and fast photoresponse time for self-powered SnS x /TiO2PDs can be achieved by adjusting the phase ratio of SnS and SnS2 nanoflakes. The binary photoswitching in the self-powered UV PDs can be applied in the encrypted optical signal processing and imaging in some special conditions without external bias.

The morphology and geometry of semiconductors will affect the photoresponse performance of mixed-dimensional heterojunction photodetectors (PDs).

The photodetector (PD) with high performance and stability in a broad range of wavelength are essential for the broadband application in sensing, communication, and imaging. The heterojunction PDs based on...

Reducing carrier trapping in the grain boundary of semiconductor materials can improve the carrier transport. Adding Na2EDTA in electrolyte can regulate the growth process of Cu2O thin films electrochemical deposited...

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