Multimodal electronic skin devices capable of detecting multimodal signals provide the possibility for health monitoring. Sensing and memory for temperature and deformation by human skin are of great significance for the perception and monitoring of physiological changes of the human body. Electronic skin is highly expected to have similar functions as human skin. Here, by implementing intrinsically stretchable neuromorphic transistors with mechanoreceptors and thermoreceptors in an array, we have realized stretchable temperature-responsive multimodal neuromorphic electronic skin (STRM-NES) with both sensory and memory functions, in which synaptic plasticity can be modulated by multiple modalities, in situ temperature variations, and stretching deformations. Temperature-responsive functions, spontaneous recovery, and temperature-dependent multitrial learning are proposed. Furthermore, a stretchable temperature neuromorphic array composed of multiple fully functional subcells is demonstrated to identify temperature distributions and variations at different regions and conditions after various strains of skin. The STRM-NES has temperature- and strain-responsive neuromorphic functions, excellent self-healing, and reusable capability, showing similar abilities as human skin to sense, transmit, memory, and recovery from external stimuli. It is expected to facilitate the development of wearable electronics, intelligent robotics, and prosthetic applications.

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Flexible electronics draw intense interest because of their promising potential for emerging applications, which, however, encounter challenging obstacles of material self-limiting fabrication, trade-off mechanical flexibility, and associated moderate electrical performance. Here, wafer-level flexible fullycarbon-integrated transistors via mixed-dimensional van der Waals (vdW) engineering is realized. Remarkable performance includes subthreshold swing of 51.8 mV dec −1 breaking thermionic limit, outstanding field-effect mobility as high as 313.8 cm 2 V −1 s −1 , and sub-1 V operating voltage. The charge transfer modulation of graphene oxide on carbon nanotube in the vdW-integrated transistors is designed to enhance channel conductance, which is simultaneously confirmed by theoretical calculations and electrical characterizations. Besides, the transistors maintain stable electrical performance after bending under an ultra-small radius of 250 µm. Exponentialsensitivity temperature sensors and binary-logic inverters are further realized to demonstrate the feasibility of the devices as the building blocks of all-vdW electronics. These results indicate that either the strategy of all-vdW transistor realization or the charge transfer provides general approach to improve device performance and further advance flexible electronic technologies.