In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I–V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approximately 104. From temperature-dependent I–V measurements we obtained a SBH of 0.661 eV for a ZnO NW Schottky device in the dark. The photosensitivity of Schottky devices under UV illumination at a power density of 3 μW/cm2 was 9186%. Variations in the SBH account for the superior characteristics of n-type Schottky devices under illumination with UV light. The SBH variations were due to the coupled mechanism of adsorption and desorption of O2 and the increase in the carrier density. Furthermore, through temperature-dependent I–V measurements, we determined the SBHs in the dark and under illumination with UV light at power densities of 0.5, 1, 2, and 3 μW/cm2 to be 0.661, 0.216, 0.178, 0.125, and 0.068 eV, respectively. These findings should be applicable in the design of highly sensitive nanoscale optoelectronic devices.

In this paper we describe the selective growth of ZnO nanorods (NRs) on top of hydrophobic Si NR arrays. The periodic Si NR arrays, prepared through electroless chemical etching and HF treatment, functioned as hydrophobic substrates. Droplets containing ZnO seeds could be positioned on the Si NR arrays, causing the ZnO seeds to deposit selectively upon them, with n-ZnO NR/p-Si NR array heterojunctions ultimately forming after hydrothermal growth of ZnO NRs. Because of compensation for the difference in refractive index between air and the Si substrate, the n-ZnO NR/p-Si NR arrays exhibited excellent absorption ability in the visible range. Devices based on these n-ZnO NR/p-Si NR array heterojunctions displayed not only rectifying behavior but also photovoltaic effects when illuminated with UV light. The low temperature and low cost of this fabrication process suggest that the selective growth of n-ZnO NRs on p-Si NR arrays might allow such structures to have diverse applications in optoelectronics.

Using low-frequency noise spectroscopy to explore the physical origins of electrical fluctuations in ZnO nanowire (NW) phototransistors featuring a metal-NW-metal configuration, we have found that bulk mobility scatterings gave rise to electrical fluctuations in the low-gate voltage (V G) regime, providing values of Hooge's constant in the ranges 6.0-9.6 × 10(-3) and 1.9-2.2 × 10(-1) in the dark and under UV excitation, respectively. When moving into the higher V G regime, we assign the electrical fluctuations to an interaction process involving trapping and detrapping of channel carriers by charge traps located near the NW-dielectric interface, suggesting that the mechanism of the electrical fluctuation transitioned from bulk NW-dominated to NW/dielectric interface-dominated regimes. We have also addressed the effective density of interface traps responsible for the electrical fluctuations in the high-V G region. This report provides physical insight into the origins of electrical fluctuations in NW phototransistors.