Transition metal dichalcogenides (TMDs) are promising for spintronic devices owing to their spin-orbit coupling and loss of inversion symmetry. However, further development was obstructed by their intrinsic nonmagnetic property. Doping TMDs with non-metal light atoms has been predicted to be a good option to induce unexpected magnetic properties which remain rarely explored. Here, we utilize nitrogen doping to introduce magnetic domains into anisotropic ReS 2 , giving rise to a transition from nonmagnetic to tunable magnetic ordering. Both of the experimental and computational results confirmed that the N-doping in ReS 2 prefers to take place at the edge site than in-plane site. With controlled doping concentration, it exhibits a unique ferromagnetic-antiferromagnetic (FM-AFM) coupling. Assisted by theoretical calculations, we demonstrated that FM-AFM coupling presents a strong link to doping contents and doping sites. Wherein, the FM ordering mostly comes from N atoms and the AFM ordering originate from Re atoms. At the N-doping content of 4.24%, the saturated magnetization of N-doped ReS 2 reached the largest value of 2.1 emu g −1 at 2 K. Further altering the content to 6.64%, the saturated magnetization of N-doped ReS 2 decreases, but exhibits a distinct exchange bias (EB) phenomenon of around 200 Oe. With controlled N-doping concentrations, the intrinsic spin in ReS 2 could be well altered and resulted in distinct magnetism, presenting tremendous potential for spintronic devices in information storage.
Zinc oxide–graphene quantum dot (ZnO–GQD) hybrid thin films are synthesized by solution processing. Memory devices with Al/ZnO–GQD/Pt structures exhibit reliable bipolar switching performances with an excellent uniform distribution of switching parameters, ultra‐low switching voltages, and high ON/OFF ratios. Compared with a pure ZnO‐based device, the switching voltages of the Al/ZnO–GQD/Pt device are decreased by 75%, and its coefficient of variation is one order of magnitude lower than that of the pure ZnO‐based device. X‐ray photoelectron spectroscopy and Raman spectroscopy analyses reveal the reversible redox of GQDs under an applied electric field, which facilitates the formation and rupture of conductive filaments. The reversible exchange of oxygen ions between the GQDs and ZnO under an electric field guides the practical application of such hybrid materials in high‐performance nonvolatile memory devices.
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