Since the late 20th century, there has been rapid development in the display industry. Only 30 years ago, we used big cathode ray tube displays with poor resolution, but now most people use televisions or smartphones with very high‐quality displays. People now want images that are more realistic, beyond the two‐dimensional images that exist on the flat screen, and digital holography—one of the next‐generation displays—is expected to meet that need. The most important parameter that determines the performance of a digital hologram is the pixel pitch. The smaller the pixel pitch, the higher the level of hologram implementation possible. In this study, we fabricated the world‐smallest 3‐μm‐pixel‐pitch holographic backplane based on the spatial light modulator technology. This panel could display images with a viewing angle of more than 10°. Furthermore, a comparative study was conducted on the fabrication processes and the corresponding holographic results from the large to the small pixel‐pitch panels.

A new pixel structure for the realization of a 1‐μm‐pixel‐pitch display was developed. This structure, named vertically stacked thin‐film transistor (VST), was based on the conventional back‐channel etched thin‐film transistor (TFT), but all the layers except the horizontal gate line were vertically stacked on the embedded data line, enabling the implementation of high‐resolution display panels. The VST device with a channel length of 1 μm showed a high field effect mobility of more than 50 cm2/Vs and low subthreshold slope of 78 mV per decade. It also shows a high uniform electrical characteristic over the entire 6‐in. wafer. The development of a new pixel architecture is expected to enable the implementation of 1‐μm‐pixel‐pitch high‐resolution displays such as spatial light modulators for digital holograms.

The heights of ridges, which are formed after crystallizing amorphous Si films, vary linearly to the initial film thicknesses. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved thin-film transistor characteristics. Relevant parameters influencing the planarization process are discussed. The optimum energy for planarization corresponds to the energy at which ridge peak blunting is maximum.

We used the magnetic resonant wireless power transmission technology to lit thin OLED lighting panels. For the magnetic resonant wireless power transmission, we used small and thin four layer printed circuit board for the receiver. The resonant frequency is lowered up to 457 kHz for the electromagnetic regulation.

We successfully demonstrate a 1.89‐inch SLMoG (spatial light modulator on glass) driven by oxide BCE (back channel etch) TFTs (thin‐film transistor). It is necessary for SLM to have very fine pixel pitch and large panel size for realizing high display quality of digital holography. To confirm such technical demands, we fabricate 1.89‐inch SLMoG with 20‐μm pixel pitch, and apply ECB (electrically controlled birefringence) LC (liquid crystal) mode for light phase modulation. In this article, we report the results of demonstration and discuss technical issues of SLMoG technology.