In this work, an intensive plasmonic flash light sintering technique was developed by using a band-pass light filter matching the plasmonic wavelength of the copper nanoparticles. The sintering characteristics, such as resistivity and microstructure, of the copper nanoink films were studied as a function of the range of the wavelength employed in the flash white light sintering. The flash white light irradiation conditions (e.g., wavelength range, irradiation energy, pulse number, on-time, and off-time) were optimized to obtain a high conductivity of the copper nanoink films without causing damage to the polyimide substrate. The wavelength range corresponding to the plasmonic wavelength of the copper nanoparticles could efficiently sinter the copper nanoink and enhance its conductivity. Ultimately, the sintered copper nanoink films under optimal light sintering conditions showed the lowest resistivity (6.97 μΩ·cm), which was only 4.1 times higher than that of bulk copper films (1.68 μΩ·cm).

The surface plasmon welding of AgNWs via combined intense pulsed light (IPL) irradiation was shown.

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excellent scalability. [1,2] These advantages were attributed to the simple structure of metal-semiconductor-metal structure. In this structure, the role of metal layer is the connecting ReRAM with bit line (BL) and word line (WL). The semiconductor layer has the switching function according to external circumstance such as external voltage load. This layer has two resistances state such as high resistance state (HRS) and a low resistance state (LRS). The mechanism of two-terminal variable resistor is the formation and rupture of conductive filaments (CF) composed of oxygen vacancy in the semiconductor layer. [1,3] The switching from LRS to HRS is meant the formation of CF in semiconductor layer and is called SET. On the other hands, switching from HRS to LRS is meant the rupture of CF in semiconductor layer and is called RESET. [4] This switching process occurred when the external voltage exceeds the operating voltage. Therefore, resistance of the ReRAM was not changed within the operating voltage, it can have WORM characteristic. [1,5] This WORM characteristic was changed by electrical properties of semiconductor layer such as operating voltage and on-off ratio. The material type of semiconductor has the most important effect on the electrical properties of ReRAM. Recently, Metal oxides such as NiO and TiO 2 were used as the conventional materials of ReRAM semiconductor layer. [3,6] On the other hands, ReRAM based on metal oxide has the limitation in that it is difficult to maintain high stability and sufficient device life. [7] This is due to the phase change problem of the semiconductor layer and the interlayer diffusion problem. [8] As alternative to metal oxides, r-GO was the most interesting and promising ReRAM materials. The r-GO is made by reducing GO, and it is possible to control the electrical characteristics such as band gap and conductivity depending on the reduction degree. [9] The r-GO can be fabricated with a coating process in solution form, simplifying the replacement of complicated photolithography processes. Since the existing metal oxide semiconductor film is brittle, it causes micro-cracks in small impact or bending situations, which adversely affects device characteristics. However, the r-GO semiconductor film has excellent mechanical properties, thus it is possible to In this study, an intense pulsed light (IPL) is irradiated for reducing graphene oxide (GO) to form a flexible resistive random access memory (ReRAM). The reduced-GO (r-GO) thin semiconductor layer is coated using spin coating method with distilled-water and ethanol-based solution on the flexible bottom electrode (Cu). The irradiation conditions are optimized to obtain high retention and switching characteristics. A top electrode (Al) is formed by deposition process and the electrical characteristics of the ReRAM are measured using a parameter analyzer. The optimally reduced GO-based ReRAM shows write-once read-many times (WORM) characteristics and high electrical performances such as on/off ratio (≈10 3 ), operation vo...

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