A diamond-shaped P-doped ZnO nanostructure was fabricated on a Si (100) substrate by a chemical vapor deposition method. The photoluminescence properties of the ZnO nanostructure were studied with a temperature range from 81 to 306 K. At 81 K, a series of transitions of donor−acceptor pairs and their phonon replicas were observed in the PL spectrum. These results revealed that shallow-donor and deep-acceptor impurity bands existed in the P-doped ZnO nanostructure. From 81 to 111 K, the abnormal UV emission intensity was observed. The multiphonon scattering spectra were attributed to the interaction of electrons and phonons.

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High speed broadband photodetectors (PDs) have attracted significant interest for many applications such as imaging, gas sensing, and night vision. In this study, the widest reported detection range is achieved from 254 nm to 1800 nm by integrating CsPb(BrCl)3: Yb3+ nanocrystals (NCs) with Germanium (Ge) on a Si substrate. To overcome the persistent photoconductance (PPC) effect that limits the detector response speed in the UV region, this study proposes a down conversion technology to convert UV light to 980 nm infrared light by applying a CsPb(BrCl)3: Yb3+ NCs. The response time of the hybrid PD at 275 nm decreased significantly from several hundred seconds to 1.21 µs. Moreover, benefiting from the CsPb(BrCl)3: Yb3+ NCs antireflection layer, the responsivity of a hybrid CsPb(BrCl)3: Yb3+ NCs /Ge metal semiconductor metal (MSM) PD has enhanced the whole detection band, especially at 1310 nm, which increased by 80% from 0.16 to 0.29 A W−1. This work promotes the development of perovskite integrated optoelectronic devices and provides a feasible route for broad‐band PD from the UV to near infrared (NIR) band.