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In metal-semiconductor hybrid nanostructures, metal absorbs incident photons and generates hot carriers. The hot carriers are injected into the adjacent semiconductor and subsequently contribute to photocurrent. This process increases the conversion efficiency of optoelectronic devices and provides a new path of photodetectors. In this work, we report an enhanced photodetector by hot holes transfer, which is based on Au nanoparticles decorated p-type Cu 2 O nanowires. The photodetector achieves an enhanced photo-responsivity up to 0.314 A W −1 , a higher detectivity of 3.7×10 10 Jones. The response time and external quantum efficiency of the Cu 2 O-Au nanowires photodetector are 3.7 times faster and 18.2 times higher than that of the Cu 2 O nanowires, respectively. The findings indicate that Cu 2 O-Au nanowires would be a promising candidate in developing novel plasmonic hot carrier devices.